switching MOSFET MASPOWER MS4N1350 with 1500 volt drain source voltage and low intrinsic capacitance
Key Attributes
Model Number:
MS4N1350
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
824pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
MS4N1350
Package:
TO-3PH
Product Description
Product Overview
The MS4N1350/S/T/E/W is a high-performance MOSFET designed for switching applications. It features a high breakdown voltage (VDS=1500V), a continuous drain current of 4A, and low on-resistance (RDS(on)<7 @ VGS=10V). The device is 100% avalanche tested and offers minimized intrinsic capacitances and Qg for high-speed switching. It is suitable for various switching applications.
Product Attributes
- Brand: Maspower
- Model Series: MS4N1350/S/T/E/W
- Technology: H1.11
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 1500 | V | |||
| Transient Gate-Source Voltage | VGSS | ±30 | V | |||
| Continuous Gate-Source Voltage (DC) | VGSS | ±20 | V | |||
| Drain Current-continuous | ID | (Tc=25) | 4 | A | ||
| Drain Current-pulse | IDM | (note 1) | 16 | A | ||
| Single Pulsed Avalanche Energy | EAS | (note 2) | 460 | mJ | ||
| Maximum Power Dissipation (TO-3PH) | PD | (Tc=25) | 73 | W | ||
| Maximum Power Dissipation (TO-220F) | PD | (Tc=25) | 29 | W | ||
| Maximum Power Dissipation (TO-263/TO-247/TO-22) | PD | (Tc=25) | 336 | W | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A,VGS=0V | 1500 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V | - | - | 10 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 3.5 | - | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=1A (note 3) | - | 5.5 | 7 | Ω |
| Forward Transconductance | gfs | VDS=30V,ID=3A (note 3) | - | 5.8 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 824 | - | pF |
| Output capacitance | Coss | - | 127 | - | pF | |
| Reverse transfer capacitance | Crss | - | 29 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDS=750V, ID=3A, VGS=10V RG=25Ω | - | 31 | - | ns |
| Turn-On rise time | tr | - | 56 | - | ns | |
| Turn-Off delay time | td(Off) | - | 105 | - | ns | |
| Turn-Off rise time | tf | - | 115 | - | ns | |
| Total Gate Charge | Qg | VDS=750V,ID=3A, VGS=10V RG=25Ω | - | 37 | - | nC |
| Gate-Source charge | Qgs | - | 6 | - | nC | |
| Gate-Drain charge | Qgd | - | 22 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=1A (note 3) | - | - | 1.4 | V |
| Diode Forward Current | IS | TC=25 | - | - | 4 | A |
| Reverse recovery time | Trr | IS=3A, -di/dt=100A/µs | - | 376 | - | ns |
| Reverse recovery charge | Qrr | - | 2.1 | - | µC | |
| Thermal Characteristics | ||||||
| Thermal Resistance, junction to Case,Max | Rth(j-C) | 1.7 (TO-3PH) | 0.371 (TO-263) | 4.2 (TO-220F) | /W | |
| Thermal Resistance, junction to Ambient,Max | Rth(j-A) | 50 (TO-3PH) | 35 (TO-263) | 58 (TO-220F) | /W | |
Order Message
| Marking | Package |
|---|---|
| MS4N1350 | TO-3PH |
| MS4N1350S | TO-220F |
| MS4N1350E | TO-263 |
| MS4N1350W | TO-247 |
| MS4N1350T | TO-220 |
2511051701_MASPOWER-MS4N1350_C3825161.pdf
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