1200V 60A ultrafast soft recovery rectifier diode MICROCHIP APT2X60DQ120J with popular SOT227 package
Key Attributes
Model Number:
APT2X60DQ120J
Product Custom Attributes
Mfr. Part #:
APT2X60DQ120J
Product Description
Product Overview
This ultrafast soft recovery rectifier diode, available in APT2x60DQ120J and APT2x61DQ120J models, offers 1200V and 60A ratings. It provides low losses, low noise switching, cooler operation, higher reliability, and increased system power density. Key features include ultrafast and soft recovery characteristics, low forward voltage, high blocking voltage, low leakage current, and avalanche energy rating, making it suitable for a wide range of applications such as switchmode power supplies, inverters, motor controllers, converters, uninterruptible power supplies, induction heating, and high-speed rectifiers.
Product Attributes
- Brand: Microsemi
- Package: SOT-227 (ISOTOP)
- Certifications: UL Recognized (E145592)
Technical Specifications
| Model | Voltage (V) | Current (A) | Package | Features |
| APT2x60DQ120J | 1200 | 60 | SOT-227 | Ultrafast Soft Recovery Rectifier Diode, Low Losses, Low Noise Switching, Cooler Operation, Higher Reliability, Increased System Power Density, Ultrafast Recovery Times, Soft Recovery Characteristics, Popular SOT-227 Package, Low Forward Voltage, High Blocking Voltage, Low Leakage Current, Avalanche Energy Rated |
| APT2x61DQ120J | 1200 | 60 | SOT-227 | Ultrafast Soft Recovery Rectifier Diode, Low Losses, Low Noise Switching, Cooler Operation, Higher Reliability, Increased System Power Density, Ultrafast Recovery Times, Soft Recovery Characteristics, Popular SOT-227 Package, Low Forward Voltage, High Blocking Voltage, Low Leakage Current, Avalanche Energy Rated |
| Characteristic / Test Conditions | Symbol | MIN | TYP | MAX | UNIT |
| Forward Voltage, IF = 60A | VF | 2.5 | Volts | ||
| Forward Voltage, IF = 120A | VF | 3.1 | Volts | ||
| Maximum Reverse Leakage Current, VR = 200V | IRM | 3.07 | A | ||
| Maximum Reverse Leakage Current, IF = 60A, TJ = 125C | IRM | 1.82 | A | ||
| Junction Capacitance, VR = 1200V | CT | 100 | pF | ||
| Junction Capacitance, VR = 1200V, TJ = 125C | CT | 500 | 70 | pF | |
| Maximum D.C. Reverse Voltage | VR | 1200 | Volts | ||
| Maximum Peak Repetitive Reverse Voltage | VRRM | 1200 | Volts | ||
| Maximum Working Peak Reverse Voltage | VRWM | 1200 | Volts | ||
| Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) | IF(AV) | 60 | Amps | ||
| RMS Forward Current (Square wave, 50% duty) | IF(RMS) | 73 | Amps | ||
| Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) | IFSM | 540 | Amps | ||
| Avalanche Energy (1A, 40mH) | EAVL | 20 | mJ | ||
| Operating and StorageTemperature Range | TJ,TSTG | -55 | 175 | C | |
| Junction-to-Case Thermal Resistance | RJC | .56 | C/W | ||
| RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) | VIsolation | 2500 | Volts | ||
| Package Weight | WT | 1.03 | oz | ||
| Maximum Mounting Torque | Torque | 10 | lbin | ||
| Reverse Recovery Time, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 25C | trr | 60 | ns | ||
| Reverse Recovery Time, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 125C | trr | 265 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 125C | Qrr | 560 | nC | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -200A/s, VR = 800V, TC = 125C | IRRM | 5 | Amps | ||
| Reverse Recovery Time, IF = 60A, diF/dt = -1000A/s, VR = 800V, TC = 125C | trr | 350 | ns | ||
| Reverse Recovery Charge, IF = 60A, diF/dt = -1000A/s, VR = 800V, TC = 125C | Qrr | 2890 | nC | ||
| Maximum Reverse Recovery Current, IF = 60A, diF/dt = -1000A/s, VR = 800V, TC = 125C | IRRM | 13 | Amps | ||
| Reverse Recovery Time, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | trr | 150 | ns | ||
| Reverse Recovery Charge, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | Qrr | 4720 | nC | ||
| Maximum Reverse Recovery Current, IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C | IRRM | 40 | Amps |
2411061139_MICROCHIP-APT2X60DQ120J_C21354957.pdf
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