MCC MMBT4401TP General Purpose NPN Transistor with 0.1A Collector Cutoff Current and RoHS Compliance
Key Attributes
Model Number:
MMBT4401-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
-
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT4401-TP
Package:
SOT-23
Product Description
Product Overview
The MMBT4401 is an NPN general-purpose amplifier housed in a SOT-23 package. It is designed for various amplification applications and offers features such as a maximum power dissipation of 350mW and a continuous collector current (Ic) of 600mA. This component is available in lead-free and RoHS-compliant versions, with a halogen-free option. It operates within a wide temperature range and meets flammability rating standards.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Package: SOT-23
- Certifications: RoHS Compliant, Halogen Free available
- Flammability Rating: Epoxy meets UL 94 V-0
- Moisture Sensitivity Level: 1
- Marking: 2X/M4A
Technical Specifications
| Parameter | Min | Max | Units | Conditions |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | 40 | Vdc | IC=1.0mAdc, IB=0 | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 60 | Vdc | IC=10mAdc, IE=0 | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 6.0 | Vdc | IE=0.1mAdc, IC=0 | |
| Base Cutoff Current (IBL) | 0.1 | Adc | VCE=35Vdc, VBE=0.4Vdc | |
| Collector Cutoff Current (ICEX) | 0.1 | Adc | VCE=35Vdc, VBE=0.4Vdc | |
| DC Current Gain (hFE) | 20 | IC=0.1mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 40 | IC=1.0mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 80 | IC=10mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 100 | IC=150mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 300 | IC=500mAdc, VCE=1.0Vdc | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.4 | Vdc | IC=150mAdc, IB=15mAdc | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.75 | Vdc | IC=500mAdc, IB=50mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.75 | Vdc | IC=150mAdc, IB=15mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.95 | Vdc | IC=500mAdc, IB=50mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 1.2 | Vdc | ||
| Current Gain-Bandwidth Product (fT) | 250 | MHz | IC=20mAdc, VCE=10Vdc, f=100MHz | |
| Collector-Base Capacitance (Ccb) | 6.5 | pF | VCB=5.0Vdc, IE=0, f=1.0MHz | |
| Emitter-Base Capacitance (Ceb) | 30.0 | pF | VBE=0.5Vdc, IC=0, f=1.0MHz | |
| Delay Time (td) | 15 | ns | VCC=30Vdc, VBE=0.2Vdc, IC=150mAdc, IB1=15mAdc | |
| Rise Time (tr) | 20 | ns | VCC=30Vdc, VBE=0.2Vdc, IC=150mAdc, IB1=15mAdc | |
| Storage Time (ts) | 225 | ns | VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc | |
| Fall Time (tf) | 30 | ns | VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc | |
| Power Dissipation (PD(MAX)) | 350 | mWatts | ||
| Continuous Collector Current (Ic) | 600 | mA | ||
| Operating Junction Temperature | -55 | 150 | C | |
| Storage Junction Temperature | -55 | 150 | C | |
| Thermal Resistance Junction to Ambient | 357 | C/W |
2410121952_MCC-MMBT4401-TP_C78718.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
