Hermetically sealed MICROCHIP 1N5809US diode featuring ultrafast recovery and 6 amp current capacity

Key Attributes
Model Number: 1N5809US
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@100V
Non-Repetitive Peak Forward Surge Current:
125A
Reverse Recovery Time (trr):
30ns
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-65℃~+175℃
Voltage - Forward(Vf@If):
875mV@4A
Current - Rectified:
6A
Mfr. Part #:
1N5809US
Package:
MELF-SQ
Product Description

Product Overview

This series of ultrafast recovery rectifier diodes, military-qualified and designed for high-reliability applications, features a 6.0 amp rating with working peak reverse voltages from 50 to 150 volts. They are hermetically sealed with void-less glass construction and internal "Category 1" metallurgical bonds, available in both surface mount MELF and leaded package configurations. These rectifiers are ideal for switching power supplies and other applications requiring extremely fast switching, low forward loss, high forward surge current capability, low thermal resistance, and controlled avalanche with peak reverse power capability. They are inherently radiation hard.

Product Attributes

  • Brand: Microsemi Corporation
  • Certifications: Qualified per MIL-PRF-19500/477 (JAN, JANTX, JANTXV, JANS), RoHS compliant versions available (commercial grade only)
  • Construction: Void-less hermetically sealed glass package, quadruple-layer passivation, internal "Category 1" metallurgical bonds
  • Material: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper terminals
  • Marking: Body coated in blue with part number
  • Polarity: Cathode indicated by band
  • Package Options: MELF ("B" Package - US, URS), Axial-leaded ("B" Package)
  • Weight: 539 milligrams

Technical Specifications

Part NumberWorking Peak Reverse Voltage (VRWM)Forward Surge Current (IFSM)Average Rectified Output Current (IO1 @ TL=+75C)Reverse Recovery Time (trr)Breakdown Voltage (VBR @ 100 A)Forward Voltage (VF @ 4 A)Reverse Current (IR @ VRWM)
VoltsAmpsAmpsnsVoltsVoltsA
1N5807US / 1N5807501256.030600.875 (25C) / 0.800 (125C)5 (25C) / 525 (125C)
1N5809US / 1N58091001256.0301100.875 (25C) / 0.800 (125C)5 (25C) / 525 (125C)
1N5811US / 1N58111501256.0301600.875 (25C) / 0.800 (125C)5 (25C) / 525 (125C)

2410121621_MICROCHIP-1N5809US_C6797970.pdf

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