NPN Plastic Encapsulated Transistor MCC BC846BHE3 TP Lead Free RoHS Compliant AEC Q101 Qualification
Key Attributes
Model Number:
BC846BHE3-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC846BHE3-TP
Package:
SOT-23
Product Description
Product Overview
The BC846AHE3 thru BC848CHE3 series are NPN plastic-encapsulated transistors designed for general-purpose applications. They feature AEC-Q101 qualification, Halogen-Free "Green" device compliance, and meet UL 94 V-0 flammability rating. These transistors are lead-free and RoHS compliant, suitable for various electronic circuits requiring reliable switching and amplification.
Product Attributes
- Brand: MCCSEMI
- Certifications: AEC-Q101 Qualified, UL 94 V-0 Flammability Rating
- Material: Plastic Encapsulate
- Features: Halogen Free. "Green" Device, Moisture Sensitivity Level 1, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | BC846AHE3-BC846BHE3 | BC847AHE3-BC847CHE3 | BC848AHE3-BC848CHE3 | Conditions | Min | Typ | Max | Unit |
| Collector Current | IC | 100 | @ 25C Unless Otherwise Specified | 100 | mA | ||||
| Collector Power Dissipation | PC | @ 25C Unless Otherwise Specified | 225 | mW | |||||
| Collector-Emitter Voltage | VCEO | @ 25C Unless Otherwise Specified | 65 | V | |||||
| Emitter-Base Voltage | VEBO | @ 25C Unless Otherwise Specified | 6 | V | |||||
| Collector-Base Voltage | VCBO | @ 25C Unless Otherwise Specified | 80 | V | |||||
| Operating Junction Temperature Range | -55 | +150 | |||||||
| Storage Temperature Range | -55 | +150 | |||||||
| Maximum Thermal Resistance | Junction to Ambient | 556 | /W | ||||||
| Collector Cut-off Current | ICBO | VCB=70V, IE=0 | 0.1 | A | |||||
| Collector Cut-off Current | ICBO | VCB=50V, IE=0 | 0.1 | A | |||||
| Collector Cut-off Current | ICBO | VCB=30V, IE=0 | 0.1 | A | |||||
| Emitter Cutoff Current | IEBO | VEB=5V, IC=0 | 0.1 | A | |||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 65 | V | |||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 45 | V | |||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 30 | V | |||||
| Collector-Base Breakdown Voltage | V(BR)CBO | IE=10A, IC=0 | 80 | V | |||||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IC=10A, IE=0 | 6 | V | |||||
| DC Current Gain | hFE | 200-450 | 420-800 | IC=10mA, VCE=5V | |||||
| DC Current Gain | hFE | 420-800 | IC=10mA, VCE=5V | ||||||
| DC Current Gain | hFE | 200-450 | IC=100mA, VCE=5V | ||||||
| DC Current Gain | hFE | 420-800 | IC=100mA, VCE=5V | ||||||
| DC Current Gain | hFE | 420-800 | IC=100mA, VCE=5V | ||||||
| DC Current Gain | hFE | 200-450 | IC=100mA, VCE=5V | ||||||
| DC Current Gain | hFE | 420-800 | IC=100mA, VCE=5V | ||||||
| DC Current Gain | hFE | 420-800 | IC=100mA, VCE=5V | ||||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100mA, IB=5mA | 0.25 | 0.7 | V | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=10mA, IB=0.5mA | 0.1 | 0.5 | V | ||||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=10mA, IB=0.5mA | 0.7 | 1.1 | V | ||||
| Transition Frequency | fT | IC=10mA, VCE=5V | 100 | MHz | |||||
| Transition Frequency | fT | IC=10mA, VCE=5V | 100 | MHz | |||||
| Transition Frequency | fT | IC=10mA, VCE=5V | 110 | MHz | |||||
| Transition Frequency | fT | IC=10mA, VCE=5V | 220 | MHz | |||||
| Collector Output Capacitance | Cob | VCB=10V, IE=0, f=0.1MHz | 4.5 | pF |
2410010102_MCC-BC846BHE3-TP_C3199844.pdf
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