Power MOSFET MASPOWER MS25N65HCT1 with ultra low gate charge and 650 volt drain source voltage rating
Key Attributes
Model Number:
MS25N65HCT1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.2pF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MS25N65HCT1
Package:
TO-220F
Product Description
Product Overview
The MS25N65HCT1 is a high-performance power semiconductor from Maspower, designed for demanding power applications. It features ultra-low RDS(on) and gate charge, along with 100% UIS tested reliability. This device is ideal for power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Maspower
- Model: MS25N65HCT1
- Compliance: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Drain Current - continuous | ID | TC=25 | 25 | A | ||
| Drain Current - continuous | ID | TC=100 | 13 | A | ||
| Drain Current - pulse (note 1) | IDM | 60 | A | |||
| Gate-Source VoltageDC | VGSS | 20 | V | |||
| Single Pulsed Avalanche Energy (note 2) | EAS | 600 | mJ | |||
| Power Dissipation | PD | 34 | W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Solding temperature,wave solding only allowed at leads.(1.6mm for 10s) | Tsold | 260 | ||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 650 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 1 | uA |
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=20V | - | - | 100 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=20V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.5 | 3.0 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A, TJ=25 | - | 0.16 | 0.18 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A, TJ=150 | - | 0.42 | - | |
| Forward Transconductance | gfs | VDS=10V,ID=10A (note 4) | - | 2.2 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHz open drain | - | 5.08 | - | |
| Input capacitance | Ciss | VDS=100V, VGS=0V, F=1.0MHz | - | 1921 | - | pF |
| Output capacitance | Coss | VDS=100V, VGS=0V, F=1.0MHz | - | 65.1 | - | pF |
| Reverse transfer capacitance | Crss | VDS=100V, VGS=0V, F=1.0MHz | - | 1.2 | - | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=400V,ID=10A, RG=10(note 4,5) | - | 67.0 | - | ns |
| Turn-On rise time | tr | VDD=400V,ID=10A, RG=10(note 4,5) | - | 12.1 | - | ns |
| Turn-Off delay time | td(off) | VDD=400V,ID=10A, RG=10(note 4,5) | - | 71.6 | - | ns |
| Turn-Off Fall time | tf | VDD=400V,ID=10A, RG=10(note 4,5) | - | 7.9 | - | ns |
| Total Gate Charge | Qg | VDS=520V,ID=10A, VGS=0 to 10V (note4,5) | - | 40 | - | nC |
| Gate-Source charge | Qgs | VDS=520V,ID=10A, VGS=0 to 10V (note4,5) | - | 8.8 | - | nC |
| Gate-Drain charge | Qg d | VDS=520V,ID=10A, VGS=0 to 10V (note4,5) | - | 14.4 | - | nC |
| Gate-plateau voltage | Vp | VDS=520V,ID=10A, VGS=0 to 10V (note4,5) | - | 4.7 | - | V |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 20 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 60 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=10A | - | - | 1.1 | V |
| Reverse recovery time | trr | VGS=0V,IS=10A dIF/dt=100A/us (note 4) VR=400V | - | 252.3 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V,IS=10A dIF/dt=100A/us (note 4) VR=400V | - | 2561.5 | - | uC |
| Peak reverse recovery current | IRRM | VGS=0V,IS=10A dIF/dt=100A/us (note 4) VR=400V | - | 21.3 | - | A |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | Rth(J-C) | 3.7 | /W | |||
| Thermal Resistance, Junction-to-Ambient,minimal Footprint | Rth(J-A) | 62 | /W | |||
2501151750_MASPOWER-MS25N65HCT1_C42445162.pdf
Related Products
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
