power MOSFET MASPOWER MS30N100HGC0 offering low on resistance below 0.38 and 1000V voltage rating
Key Attributes
Model Number:
MS30N100HGC0
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
30A
RDS(on):
280mΩ@10V
Operating Temperature -:
-40℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@2.5mA
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
421pF
Input Capacitance(Ciss):
4.69nF
Pd - Power Dissipation:
290W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
MS30N100HGC0
Package:
TO-247
Product Description
Product Overview
The MS30N100HGC1/C0 H1.06 Maspower is a high-performance power semiconductor designed for demanding applications. It features a high breakdown voltage of 1000V and a continuous drain current of 30A, with a low on-resistance of less than 0.38. This device is avalanche tested and current rated, incorporating a fast intrinsic rectifier for enhanced performance. Its design emphasizes high power density, ease of mounting, and space savings, making it suitable for various high-power applications.
Product Attributes
- Brand: Maspower
- Model: MS30N100HGC1/C0
- Version: H1.06
Technical Specifications
| Parameter | Symbol | MS30N100HGC1 | MS30N100HGC0 | Unit |
| Drain-Source Voltage | VDSS | 1000 | 1000 | V |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Drain Current-continuous | ID | 30 | 30 | A |
| Drain Current-pulse | IDM | 55 | 55 | A |
| Single Pulsed Avalanche Energy | EAS | 750 | 750 | mJ |
| Maximum Power Dissipation (TO-247plus) | PD | 735 | - | W |
| Maximum Power Dissipation (TO-247) | PD | - | 290 | W |
| Operating Temperature Range | TJ | -40~+150 | -40~+150 | |
| Storage Temperature Range | TSTG | -55~+150 | -55~+150 | |
| Maximum lead temperature for soldering purposes | TL | 300 | 300 | |
| Drain-Source Voltage | BVDSS | 1000 | 1000 | V |
| Zero Gate Voltage Drain Current | IDSS | 1 | 1 | A |
| Gate-Body Leakage Current | IGSS | 100 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | 3.0 - 5.5 | 3.0 - 5.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | 0.38 | 0.38 | |
| Forward Transconductance | gfs | 31 | 31 | S |
| Input capacitance | Ciss | 4690 | 4690 | pF |
| Output capacitance | Coss | 421 | 421 | pF |
| Reverse transfer capacitance | Crss | 15 | 15 | pF |
| Turn-On delay time | td(on) | 76 | 76 | ns |
| Turn-On rise time | tr | 52 | 52 | ns |
| Turn-Off delay time | td(Off) | 338 | 338 | ns |
| Turn-Off rise time | tf | 76 | 76 | ns |
| Total Gate Charge | Qg | 96 | 96 | nC |
| Gate-Source charge | Qgs | 26 | 26 | nC |
| Gate-Drain charge | Qg d | 31 | 31 | nC |
| Drain-Source Diode Forward Current | IS | 30 | 30 | A |
| Diode Forward Voltage | VSD | 1.2 | 1.2 | V |
| Reverse recovery time | Trr | 0.4 | 0.4 | uS |
| Reverse Recovery Charge | Qrr | 3.9 | 3.9 | uC |
| Thermal Resistance,junction to Case (TO-247plus) | Rth(j-C) | 0.15 | - | /W |
| Case to Sink Thermal Resistance, Flat, Greased Surface (TO-247plus) | Rth(C-S) | 0.11 | - | /W |
| Thermal Resistance,junction to Case (TO-247) | Rth(j-C) | - | 0.43 | /W |
| Case to Sink Thermal Resistance (TO-247) | Rth(C-A) | - | 40 | /W |
2411261924_MASPOWER-MS30N100HGC0_C5353716.pdf
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