N Channel Power Transistor MATSUKI ME20N15-G with Pb Free and Halogen Free Green Product Certification
Key Attributes
Model Number:
ME20N15-G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
20.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
75.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4.6V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
1.039nF@30V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
32.3nC@10V
Mfr. Part #:
ME20N15-G
Package:
TO-252-3
Product Description
Product Overview
The ME20N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. Key features include exceptionally low RDS(ON) and high DC current capability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME20N15), Green product-Halogen free (ME20N15-G)
Technical Specifications
| Parameter | Symbol | ME20N15 / ME20N15-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 150 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (TC=25) | ID | 20.8 | A |
| Continuous Drain Current (TC=70) | ID | 16.6 | A |
| Pulsed Drain Current | IDM | 83 | A |
| Maximum Power Dissipation (TC=25) | PD | 62.5 | W |
| Maximum Power Dissipation (TC=70) | PD | 40 | W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Case* | RJC | 2 | /W |
| Electrical Characteristics (TJ=25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 150 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 3.4 - 4.6 | V |
| Gate-Body Leakage (VDS=0V, VGS=20V) | IGSS | 100 | nA |
| Zero Gate Voltage Drain Current (VDS=150V, VGS=0V) | IDSS | 1 | A |
| Drain-Source On-Resistance* (VGS=10V, ID=10A) | RDS(ON) | 75.5 - 90 | m |
| Drain-Source On-Resistance* (VGS=7V, ID=10A) | RDS(ON) | 84 - 110 | m |
| Diode Forward Voltage* (IS=1A, VGS=0V) | VSD | 0.72 - 1 | V |
| Dynamic Characteristics (VDS=30V, VGS=0V, f=1MHz) | |||
| Input Capacitance | Ciss | 1039 | pF |
| Output Capacitance | Coss | 136 | pF |
| Reverse Transfer Capacitance | Crss | 14 | pF |
| Switching Characteristics (VGS=10V,VDD=75V, RG=3,ID=1A, RL=75) | |||
| Turn-On Delay Time | td(on) | 24.9 | ns |
| Turn-On Rise Time | tr | 6.02 | ns |
| Turn-Off Delay Time | td(off) | 49.9 | ns |
| Turn-Off Fall Time | tf | 20 | ns |
2410121657_MATSUKI-ME20N15-G_C709774.pdf
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