Vertical DMOS N Channel FET MICROCHIP TN0104N3 G Designed for Solid State Relays and Battery Systems
Key Attributes
Model Number:
TN0104N3-G
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
450mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.8Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
1.6V
Number:
1 N-channel
Input Capacitance(Ciss):
70pF@20V
Pd - Power Dissipation:
1W
Mfr. Part #:
TN0104N3-G
Package:
TO-92
Product Description
Product Overview
The TN0104 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general purpose line drivers, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: TN0104
- Datasheet Document Number: DS20005930A
- Copyright Year: 2020
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | 40 | V | |||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | ±20 | V | ||||
| Operating Ambient Temperature | TA | -55 | +150 | °C | ||
| Storage Temperature | TS | -55 | +150 | °C | ||
| DC Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS = 0V, ID = 1 mA | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.6 | V | VGS = VDS, ID = 500 µA | |
| Change in VGS(th) with Temperature | ΔVGS(th) | -3.8 | -5 | mV/°C | VGS = VDS, ID = 1 mA (Note 1) | |
| Gate Body Leakage Current | IGSS | 0.1 | 100 | nA | VGS = ±20V, VDS = 0V | |
| Zero-Gate Voltage Drain Current | IDSS | 1 | µA | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current | IDSS | 100 | µA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | ||
| On-State Drain Current | ID(ON) | 0.35 | A | VGS = 3V, VDS = 20V | ||
| On-State Drain Current | ID(ON) | 0.5 | 1.1 | A | VGS = 5V, VDS = 20V | |
| On-State Drain Current | ID(ON) | 2 | 2.6 | A | VGS = 10V, VDS = 20V | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 5 | Ω | VGS = 3V, ID = 50 mA (Both packages) | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 2.3 | 2.5 | Ω | VGS = 5V, ID = 250 mA (Both packages) | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 1.5 | 1.8 | Ω | VGS = 10V, ID = 1A (TO-92) | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 2 | Ω | VGS = 10V, ID = 1A (SOT-89) | ||
| Change in RDS(ON) with Temperature | ΔRDS(ON) | 0.7 | 1 | %/°C | VGS = 10V, ID = 1A (Note 1) | |
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 340 | 450 | mmho | VDS = 20V, ID = 500 mA | |
| Input Capacitance | CISS | 70 | pF | VGS = 0V, VDS = 20V, f = 1 MHz | ||
| Common-Source Output Capacitance | COSS | 50 | pF | |||
| Reverse Transfer Capacitance | CRSS | 15 | pF | |||
| Turn-On Delay Time | td(ON) | 3 | 5 | ns | VDD = 20V, ID = 1A, RGEN = 25Ω | |
| Rise Time | tr | 7 | 8 | ns | ||
| Turn-Off Delay Time | td(OFF) | 6 | 9 | ns | ||
| Fall Time | tf | 5 | 8 | ns | ||
| Diode Parameters | ||||||
| Diode Forward Voltage Drop | VSD | 1.2 | 1.8 | V | VGS = 0V, ISD = 1A (TO-92) (Note 1) | |
| Diode Forward Voltage Drop | VSD | 2 | V | VGS = 0V, ISD = 0.5A (SOT-89) (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 1A | ||
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | -55 | +150 | °C | ||
| Storage Temperature | TS | -55 | +150 | °C | ||
| Package Thermal Resistance | ||||||
| 3-lead TO-92 θJA | 132 | °C/W | ||||
| 3-lead SOT-89 θJA | 133 | °C/W | ||||
| Thermal Characteristics | ||||||
| Package | ID (Continuous) (mA) | ID (Pulsed) (A) | Power Dissipation at TA = 25°C (W) | IDR (Note 1) (mA) | IDRM (A) | |
| 3-lead TO-92 | 450 | 2.4 | 1 | 450 | 2.4 | |
| 3-lead SOT-89 | 630 | 2.9 | 1.6 | 630 | 2.9 | |
Note 1: Specification is obtained by characterization and is not 100% tested.
2410121807_MICROCHIP-TN0104N3-G_C632577.pdf
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