switching N channel MOSFET MCC MCAC80N10Y TP with Split Gate Trench Technology and lead free finish

Key Attributes
Model Number: MCAC80N10Y-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.5pF
Number:
1 N-channel
Output Capacitance(Coss):
636pF
Pd - Power Dissipation:
89W
Input Capacitance(Ciss):
3.375nF@50V
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
MCAC80N10Y-TP
Package:
DFN5060
Product Description

Product Overview

The MCAC80N10Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology for high-speed switching. This device is designed for applications requiring efficient power management and fast response times. It is Moisture Sensitivity Level 1, Halogen Free ('Green' Device), and its epoxy meets UL 94 V-0 flammability rating. The lead-free finish and RoHS compliance ensure environmental responsibility. This MOSFET is suitable for various industrial and electronic applications where reliable and high-performance switching is essential.

Product Attributes

  • Brand: MCC
  • Technology: Split Gate Trench MOSFET
  • Environmental Compliance: Halogen Free ('Green' Device), Lead Free Finish/RoHS Compliant
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Moisture Sensitivity Level: 1

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID TC=25 89 A
Continuous Drain Current ID TC=100 50.6 A
Pulsed Drain Current IDM (Note 3) 320 A
Total Power Dissipation PD (Note 4) 64 W
Single Pulsed Avalanche Energy EAS (Note 5) 64 mJ
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance (Junction to Ambient) RJA (Note 2) 50 °C/W
Thermal Resistance (Junction to Case) RJC 1.4 °C/W
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1 2 3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=40A 3.7 4.3
Gate Resistance RG f=1MHz, Open drain 1.3 Ω
Continuous Body Diode Current IS 80 A
Diode Forward Voltage VSD VGS=0V, IS=40A 1.3 V
Diode Characteristics
Reverse Recovery Time trr IF=40A, dIF/dt=450A/µs 40 ns
Reverse Recovery Charge Qrr 230 nC
Dynamic Characteristics
Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHz 3375 pF
Output Capacitance Coss 636 pF
Reverse Transfer Capacitance Crss 8.5 pF
Total Gate Charge Qg VDD=50V, VGS=10V, RG=2.2Ω, IDS=40A 70 nC
Gate-Source Charge Qgs 12 nC
Gate-Drain Charge Qg d 25 nC
Turn-On Delay Time td(on) VGS=4.5V, ID=20A 14 ns
Turn-On Rise Time tr 102 ns
Turn-Off Delay Time td(off) 44 ns
Turn-Off Fall Time tf 14 ns
Static Characteristics
VDS=50V,VGS=10V,ID=40A 4.9 6.3
Dimensions A (INCHES) 0.031 0.047
Dimensions A (MM) 0.80 1.20
Dimensions B (INCHES) 0.193 0.222
Dimensions B (MM) 4.90 5.64
Dimensions C (INCHES) 0.232 0.250
Dimensions C (MM) 5.90 6.35
Dimensions D (INCHES) 0.148 0.167
Dimensions D (MM) 3.75 4.25
Dimensions E (INCHES) 0.126 0.154
Dimensions E (MM) 3.20 3.92
Dimensions F (INCHES) 0.189 0.213
Dimensions F (MM) 4.80 5.40
Dimensions G (INCHES) 0.222 0.239
Dimensions G (MM) 5.65 6.06
Dimensions H (INCHES) 0.045 0.059
Dimensions H (MM) 1.15 1.50
Dimensions K (INCHES) 0.012 0.020
Dimensions K (MM) 0.30 0.50
Dimensions J (INCHES) 0.046 0.054
Dimensions J (MM) 1.17 1.37
Dimensions L (INCHES) 0.012 0.028
Dimensions L (MM) 0.30 0.71
Dimensions M (INCHES) 0.016 0.028
Dimensions M (MM) 0.40 0.71
Dimensions N (TYP.) 0.010
Dimensions N (TYP.) 0.254

2411200046_MCC-MCAC80N10Y-TP_C3288284.pdf

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