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quality MCC MCB70N10YB TP Power MOSFET with Split Gate Trench Technology and RoHS Compliant Lead Free Finish factory
quality MCC MCB70N10YB TP Power MOSFET with Split Gate Trench Technology and RoHS Compliant Lead Free Finish factory

MCC MCB70N10YB TP Power MOSFET with Split Gate Trench Technology and RoHS Compliant Lead Free Finish

Key Attributes
Model Number: MCB70N10YB-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
RDS(on):
7.2mΩ@10V;10mΩ@6V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13.9pF
Number:
1 N-channel
Output Capacitance(Coss):
801pF
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
2.365nF
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
MCB70N10YB-TP
Package:
D2PAK
Product Description

Product Overview

The MCC MCB70N10YB is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for high performance with low RDS(on) and FOM. It is a Halogen Free, "Green" Device, meeting UL 94 V-0 flammability rating and is Lead Free/RoHS Compliant. This MOSFET is suitable for various applications requiring efficient power switching and control.

Product Attributes

  • Brand: MCC
  • Model: MCB70N10YB
  • Technology: Split Gate Trench MOSFET
  • Moisture Sensitivity Level: 1
  • Flammability Rating: UL 94 V-0
  • Compliance: Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 100 V
Continuous Drain Current ID TC=25C 70 A
Continuous Drain Current ID TC=100C 44 A
Pulsed Drain Current IDM (Note 3) 280 A
Total Power Dissipation PD (Note 4) 200 W
Single Pulsed Avalanche Energy EAS (Note 5) 280 mJ
Gate-Source Voltage VGS 20 V
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance Junction to Ambient RJA (Note 2) 40 C/W
Thermal Resistance Junction to Case RJC 1 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 2 2.8 4 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 7.2 8.6 m
Drain-Source On-Resistance RDS(on) VGS=6V, ID=20A 10 13 m
Gate Resistance Rg f=1MHz, Open drain 0.68
Continuous Body Diode Current IS 70 A
Diode Forward Voltage VSD IS=20A, VGS=0V 1.3 V
Reverse Recovery Time trr IS=20A, dIF/dt=100A/s 53 ns
Reverse Recovery Charge Qrr IS=20A, dIF/dt=100A/s 78 nC
Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHz 2365 pF
Output Capacitance Coss VDS=50V,VGS=0V,f=1MHz 801 pF
Reverse Transfer Capacitance Crss VDS=50V,VGS=0V,f=1MHz 13.9 pF
Total Gate Charge Qg VGS=10V, VDD=50V,ID=20A 31 nC
Gate-Source Charge Qgs VGS=10V, VDD=50V,ID=20A 9 nC
Gate-Drain Charge Qg VGS=10V, VDD=50V,ID=20A 6 nC
Turn-On Delay Time td(on) VGS=10V, VDD=50V,ID=20A, RGEN=2.2 13.2 ns
Turn-On Rise Time tr VGS=10V, VDD=50V,ID=20A, RGEN=2.2 4.2 ns
Turn-Off Delay Time td(off) VGS=10V, VDD=50V,ID=20A, RGEN=2.2 21 ns
Turn-Off Fall Time tf VGS=10V, VDD=50V,ID=20A, RGEN=2.2 4.6 ns
Device D2-PAK
Packing Tape&Reel: 800pcs/Reel
Part Number MCB70N10YB-TP

Dimensions (D2-PAK):

DIM INCHES MM
A 0.331 - 0.370 8.40 - 9.40
B 0.378 - 0.417 9.60 - 10.60
C 0.165 - 0.189 4.80
D 0.027 - 0.037 0.68 - 0.94
E 0.045 - 0.055 1.14 - 1.40
G 0.096 - 0.134 2.43 - 3.40
H 0.011 - 0.025 0.28 - 0.64
J 0.071 - 0.131 1.80 - 3.32
S 0.575 - 0.625 14.60 - 15.87
V 0.042 - 0.058 1.07 - 1.47
W 0.000 - 0.010 0.00 - 0.25

Suggested Solder Pad Layout:

Unit:mm

10.66 8.38 10.26
5.08 3.50 1.78
2.54 TYP. 0.10 TYP. 4.20

2504101957_MCC-MCB70N10YB-TP_C3288078.pdf

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