Compact surface mount TSOP 6 package transistor MATSUKI ME3587 designed for battery powered circuits
Key Attributes
Model Number:
ME3587
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@1.8V,1A
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Output Capacitance(Coss):
50pF
Input Capacitance(Ciss):
480pF
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
ME3587
Package:
TSOP-6
Product Description
Product Overview
The ME3587 is a series of N- and P-Channel logic enhancement mode power field-effect transistors utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low in-line power loss in compact surface-mount packages. Key features include extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Series: ME3587/ME3587-G
- Certifications: Pb-free (ME3587), Green product-Halogen free (ME3587-G)
- Package Type: TSOP-6
Technical Specifications
| Parameter | Symbol | N-channel Typical | P-channel Typical | Unit | Conditions |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | -20 | V | VGS=0V, ID=250A (N-Ch) / ID=-250A (P-Ch) |
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.2 | -0.4 - -1 | V | VDS=VGS, ID=250A (N-Ch) / ID=-250A (P-Ch) |
| Gate Leakage Current | IGSS | 100 | 100 | nA | VDS=0V, VGS=8V |
| Zero Gate Voltage Drain Current | IDSS | 1 | -1 | A | VDS=20V, VGS=0V (N-Ch) / VDS=-20V, VGS=0V (P-Ch) |
| Drain-Source On-Resistance | RDS(ON) | 37 - 45 (at VGS=4.5V, ID=3.4A) 52 - 68 (at VGS=2.5V, ID=3A) 92 - 120 (at VGS=1.8V, ID=2A) | 85 - 110 (at VGS=-4.5V, ID=-2.8A) 110 - 130 (at VGS=-2.5V, ID=-2A) 130 - 170 (at VGS=-1.8V, ID=-1A) | m | Pulse test; pulse width 300s, duty cycle 2% |
| Diode Forward Voltage | VSD | 0.7 | -0.7 - -1.4 | V | IS=1A, VGS=0V (N-Ch) / IS=-1A, VGS=0V (P-Ch) |
| Total Gate Charge | Qg | 5.3 | 7.2 | nC | VDS=15V, VGS=4.5V, ID=2.1A (N-Ch) / VDS=-6V, VGS=-4.5V, ID=-2.8A (P-Ch) |
| Gate-Source Charge | Qgs | 1.7 | 2.2 | nC | - |
| Gate-Drain Charge | Qgd | 1.4 | 1.2 | nC | - |
| Input Capacitance | Ciss | 340 | 480 | pF | VDS=15V, VGS=0V, f=1MHz (N-Ch) / VDS=-15V, VGS=0V, f=1MHz (P-Ch) |
| Output Capacitance | Coss | 50 | 46 | pF | - |
| Reverse Transfer Capacitance | Crss | 15 | 10 | pF | - |
| Turn-On Delay Time | td(on) | 11 | 50 | ns | VDS=10V, RL=10, RGEN=3, VGS=5V (N-Ch) / VDS=-6V, RL=6, RGEN=6, VGS=-4.5V (P-Ch) |
| Turn-On Rise Time | tr | 17 | 30 | ns | - |
| Turn-Off Delay Time | td(off) | 30 | 40 | ns | - |
| Turn-Off Fall time | tf | 3 | 11 | ns | - |
Applications
- Power Management in Notebooks
- Portable Equipment
- Battery Powered Systems
- Load Switches
- DSC (Digital Still Cameras)
- LCD Display Inverters
2410121656_MATSUKI-ME3587_C165236.pdf
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