Power Management MOSFET MATSUKI ME12N04 N Channel Logic Enhancement Mode with Low On State Resistance
Key Attributes
Model Number:
ME12N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
539pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
ME12N04
Package:
TO-252-3
Product Description
Product Overview
The ME12N04 is an N-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME12N04 (Pb-free), ME12N04-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current @ TC=25 | ID | 22 | A | |
| Continuous Drain Current @ TC=70 | ID | 18 | A | |
| Pulsed Drain Current | IDM | 80 | A | a. Pulse test; pulse width ≤ 300us, duty cycle≤ 2% |
| Maximum Power Dissipation @ TC=25 | PD | 25 | W | |
| Maximum Power Dissipation @ TC=70 | PD | 16 | W | |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RθJA | 42 | /W | *The device mounted on 1in² FR4 board with 2 oz copper |
| Thermal Resistance-Junction to Case* | RθJC | 5 | /W | *The device mounted on 1in² FR4 board with 2 oz copper |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage @ VGS=0V, ID=250µA | V(BR)DSS | 40 | V | |
| Gate Threshold Voltage @ VDS=VGS, ID=250µA | VGS(th) | 1 to 3 | V | |
| Gate Leakage Current @ VDS=0V, VGS=±20V | IGSS | ±100 | nA | |
| Zero Gate Voltage Drain Current @ VDS=40V, VGS=0V | IDSS | 1 | µA | |
| Drain-Source On-State Resistance @ VGS=10V, ID=12A | RDS(ON) | 22 to 28 | mΩ | a. Pulse test; pulse width ≤ 300us, duty cycle≤ 2% |
| Drain-Source On-State Resistance @ VGS=4.5V, ID=6A | RDS(ON) | 40 to 52 | mΩ | a. Pulse test; pulse width ≤ 300us, duty cycle≤ 2% |
| Diode Forward Voltage @ IS=1.7A, VGS=0V | VSD | 0.8 to 1.2 | V | |
| Dynamic Characteristics | ||||
| Total Gate Charge @ VDS=20V, VGS=10V, ID=12A | Qg | 15 | nC | |
| Total Gate Charge @ VDS=20V, VGS=4.5V, ID=12A | Qg | 7 | nC | |
| Gate-Source Charge | Qgs | 4 | nC | |
| Gate-Drain Charge | Qgd | 3.5 | nC | |
| Input Capacitance @ VDS=20V, VGS=0V, f=1MHz | Ciss | 539 | pF | |
| Output Capacitance | Coss | 75 | pF | |
| Reverse Transfer Capacitance | Crss | 23 | pF | |
| Turn-On Delay Time @ VDs=15V, RL =15Ω, ID=1A, VGs=10V, RG=6Ω | td(on) | 13 | ns | |
| Turn-On Rise Time | tr | 11 | ns | |
| Turn-Off Delay Time | td(off) | 37 | ns | |
| Turn-Off Fall Time | tf | 4 | ns | |
2410121449_MATSUKI-ME12N04_C165223.pdf
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