Durable NPN Darlington Transistor Minos TIP142T Featuring TO-220 Package for Various Electronic Applications
Key Attributes
Model Number:
TIP142T
Product Custom Attributes
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
70W
DC Current Gain:
1000
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
TIP142T
Package:
TO-220
Product Description
Product Overview
This NPN Darlington Transistor is designed for general-purpose applications requiring high current gain. It offers robust performance with specified voltage and current ratings, making it suitable for various electronic circuits. The device comes in a standard TO-220 package.
Product Attributes
- Brand: MNS
- Product Type: NPN Darlington Transistor
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Description | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| LIMIT RATINGS (Ta=25) | |||||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (Tc=25) | PC | 70 | W | ||||
| Collector-Base Voltage | VCBO | 100 | V | ||||
| Collector-Emitter Voltage | VCEO | 100 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | 8 | A | ||||
| Base Current | IB | 0.5 | A | ||||
| ELECTRICAL CHARACTERISTICS (Ta=25) | |||||||
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | 100 | V | IC=30mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | 2 | mA | VCE=50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | 1 | mA | VCB=100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | 2 | mA | VEB=5V,IC=0 | |||
| DC Current Gain | HFE(1) | 1000 | VCE=4V, IC=0.5A | ||||
| DC Current Gain | HFE(2) | 1000 | VCE=4V, IC=3A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | 2 | V | IC=5A,IB=10mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 3 | V | IC=10A,IB=40mA | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 3.5 | V | IC=10A,IB=40mA | |||
| Base-Emitter On Voltage | VBE(on) | 3 | V | VCE=4V, IC=10A | |||
| Delay Time | tD | 0.15 | S | Vcc=30V,IC=5A | |||
| Rise Time | tR | 0.55 | S | IB=20mAIB1=IB2 | |||
| Storage Time | tS | 2.5 | S | ||||
| Fall Time | tF | 2.5 | S | ||||
| Package Pinout (TO-220) | |||||||
| Pin 1 | Base (B) | ||||||
| Pin 2 | Collector (C) | ||||||
| Pin 3 | Emitter (E) | ||||||
Notes:
- Exceeding the maximum ratings may cause permanent device failure and affect dependability. Ensure circuit design does not exceed absolute maximum ratings.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
2412061751_Minos-TIP142T_C6719392.pdf
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