Trench Power LV MOSFET MCC SI2101A TP P Channel Device with Lead Free Finish and Halogen Free Design
Key Attributes
Model Number:
SI2101A-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
130mΩ@4.5V,1.5A
Gate Threshold Voltage (Vgs(th)):
620mV
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 P-Channel
Pd - Power Dissipation:
450mW
Input Capacitance(Ciss):
290pF
Gate Charge(Qg):
3.9nC@4.5V
Mfr. Part #:
SI2101A-TP
Package:
SOT-323
Product Description
Product Overview
The SI2101A is a P-CHANNEL MOSFET featuring Trench Power LV MOSFET Technology. It offers low RDS(ON) and low gate charge, making it suitable for various applications. This device is Moisture Sensitivity Level 1, Halogen Free (Green Device), meets UL 94 V-0 flammability rating, and is Lead Free Finish/RoHS Compliant. The "P" suffix designates RoHS compliance.
Product Attributes
- Brand: MCCSEMI
- Technology: Trench Power LV MOSFET
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free (Green Device), Lead Free Finish/RoHS Compliant
- Flammability Rating: UL 94 V-0
- Package Type: SOT-323
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient (2) | Device Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. | 278 | C/W | |||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | -0.45 | A | |||
| Pulsed Drain Current (3) | IDM | Pulse Test: Pulse Width300s, Duty Cycle 2% | -2 | A | ||
| Total Power Dissipation | PD | 2 | W | |||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =10V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.4 | -0.62 | -1 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-1.5A | 100 | 130 | m | |
| VGS=-2.5V, ID=-1.2A | 130 | 170 | m | |||
| VGS=-1.8V, ID=-1.0A | 165 | 250 | m | |||
| Diode Characteristics | ||||||
| Continuous Body Diode Current | IS | -2 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=-2A | -1.2 | V | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | 290 | pF | ||
| Output Capacitance | Coss | 47 | pF | |||
| Reverse Transfer Capacitance | Crss | 29 | pF | |||
| Total Gate Charge | Qg | VDS=-10V,VGS=-4.5V, RG=2.5,IDS=-1A | 3.9 | nC | ||
| Gate-Source Charge | Qgs | 0.7 | nC | |||
| Gate-Drain Charge | Qg | 0.9 | nC | |||
| Turn-On Delay Time | td(on) | 12 | ns | |||
| Turn-On Rise Time | tr | 54 | ns | |||
| Turn-Off Delay Time | td(off) | 15 | ns | |||
| Turn-Off Fall Time | tf | 9 | ns | |||
| Dimensions | ||||||
| A | INCHES | 0.071 | 1.80 | 0.087 | 2.20 | |
| B | MM | 0.083 | 2.10 | 0.096 | 2.45 | |
| C | INCHES | 0.045 | 1.15 | 0.053 | 1.35 | |
| D | MM | 0.047 | 1.20 | 0.055 | 1.40 | |
| E | INCHES | 0.012 | 0.30 | 0.016 | 0.40 | |
| F | MM | 0.000 | 0.00 | 0.004 | 0.10 | |
| G | INCHES | 0.035 | 0.90 | 0.044 | 1.10 | |
| H | MM | 0.002 | 0.05 | 0.010 | 0.25 | |
| J | INCHES | 0.006 | 0.15 | 0.016 | 0.40 | |
| K | MM | 0.026 | 0.65 | 1.90 | 0.70 | |
| L | (mm) TYP. | 0.010 | 0.26 | 0.018 | 0.46 | |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SI2101A | Tape&Reel: 3Kpcs/Reel | ***-TP |
2312121233_MCC-SI2101A-TP_C6488156.pdf
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