RoHS Compliant PNP Small Signal Transistor MCC BC807-40HE3-TP with 45 Volt Collector Emitter Voltage
Key Attributes
Model Number:
BC807-40HE3-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC807-40HE3-TP
Package:
SOT-23
Product Description
Product Overview
The BC807-16HE3 to BC807-40HE3 series are PNP small signal transistors designed for general-purpose applications. These devices feature a 300mW power dissipation and are AEC-Q101 qualified, making them suitable for automotive and other demanding environments. They are also Halogen Free, RoHS Compliant, and meet UL 94 V-0 flammability rating.
Product Attributes
- Brand: MCCSEMI.COM
- Certifications: AEC-Q101 Qualified, UL 94 V-0 Flammability Rating
- Material: Halogen Free. "Green" Device
- Compliance: Lead Free Finish/RoHS Compliant
- Moisture Sensitivity Level: 1
- Marking: BC807-16HE3: 5A, BC807-25HE3: 5B, BC807-40HE3: 5C
Technical Specifications
| Parameter | Symbol | Rating | Conditions | Unit | BC807-16HE3 | BC807-25HE3 | BC807-40HE3 |
| Collector Current | IC | -500 | mA | ||||
| Peak Collector Current | ICM | -1000 | mA | ||||
| Collector-Emitter Voltage | VCEO | -45 | V | ||||
| Emitter-Base Voltage | VEBO | -5 | V | ||||
| Collector-Base Voltage | VCBO | -50 | V | ||||
| Collector Power Dissipation | PC | 300 | mW | ||||
| Operating Junction Temperature Range | -55 to +150 | ||||||
| Storage Temperature Range | -55 to +150 | ||||||
| Thermal Resistance | 417 | Junction to Ambient | /W | ||||
| Emitter-Base Cutoff Current | IEBO | -0.1 | VEB=-4V, IC=0 | A | |||
| Collector Cutoff Current | ICBO | -0.1 | VCB=-45V, IE=0 | A | |||
| Collector Cutoff Current | ICEO | -0.2 | VCB=-40V, IE=0 | A | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | IC=-10A, IE=0 | V | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | IC=-10mA, IB=0 | V | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 | IC=-1mA, IE=0 | V | |||
| Transition Frequency | fT | 100 | VCE=-5V, IC=-10mA, f=100MHz | MHz | |||
| DC Current Gain | hFE1 | 100 Min | VCE=-1V, IC=-500mA | ||||
| DC Current Gain | hFE1 | 400 Max | VCE=-1V, IC=-500mA | ||||
| DC Current Gain | hFE2 | 100 Min | VCE=-1V, IC=-100mA | ||||
| DC Current Gain | hFE2 | 600 Max | VCE=-1V, IC=-100mA | ||||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | IC=-500mA, IB=-50mA | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | IC=-500mA, IB=-50mA | V |
2506301100_MCC-BC807-40HE3-TP_C3199859.pdf
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