MDD Microdiode Semiconductor S9013 NPN Transistor Featuring Excellent hFE Linearity in SOT23 Package
Key Attributes
Model Number:
S9013
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9013
Package:
SOT-23
Product Description
Product Overview
The S9013 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features high collector current, complementary characteristics to the S9012, and excellent hFE linearity. This transistor is suitable for various electronic applications requiring amplification and switching.
Product Attributes
- Brand: Microdiode (implied by URL)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 0.5 | A | |||
| Collector Power Dissipation | PC | 0.3 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=1V, IC=50mA | 120 | 400 | ||
| Rank L | 120 | 200 | ||||
| Rank H | 200 | 350 | ||||
| Rank J | 300 | 400 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC=20mA f=30MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=6V, IE=0 f=1MHz | 8 | pF | ||
| Base-emitter voltage | VBE | VCB=1V, IC=10mA | 0.7 | V | ||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Thermal Resistance | RJA | 416 | /W |
2411211951_MDD-Microdiode-Semiconductor-S9013_C431712.pdf
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