power switching device MCC BSS84-TP P channel MOSFET with ultra low RDSon and SOT23 package

Name: power switching device MCC BSS84-TP P channel MOSFET with ultra low RDSon and SOT23 package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BSS84-TP
Availability: InStock

Key Attributes

Model Number: BSS84-TP

Product Custom Attributes

Drain To Source Voltage:

50V

Current - Continuous Drain(Id):

130mA

Operating Temperature -:

-55℃~+150℃@(Tj)

RDS(on):

8Ω@10V,100mA

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

5pF@25V

Number:

1 P-Channel

Input Capacitance(Ciss):

30pF@25V

Pd - Power Dissipation:

225mW

Gate Charge(Qg):

Mfr. Part #:

BSS84-TP

Package:

SOT-23

Product Description

Product Overview

The BSS84 is a P-CHANNEL MOSFET designed for high-density cell applications, offering ultra-low RDS(on). It features a rugged and reliable construction, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This device is available in a lead-free finish and is RoHS compliant. It is suitable for various applications requiring efficient power switching.

Product Attributes

Brand: MCC SEMI
Model: BSS84
Package: SOT-23
Flammability Rating: UL 94 V-0
Moisture Sensitivity Level: 1
Compliance: RoHS Compliant (P suffix), Halogen Free available (add -HF suffix)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Gate-Source Voltage	VGS	Rating			20	V
Drain-Source Voltage	VDS	Rating	-50			V
Pulsed Drain Current	IDM	Rating			-225	mA
Continuous Drain Current	ID	Rating		-0.13	-0.52	A
Total Power Dissipation	PD	Rating			225	mW
Operating Junction Temperature Range			-55		+150	C
Storage Temperature Range			-55		+150	C
Thermal Resistance		Junction to Ambient		556		C/W
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=-250A	-50			V
Gate-Source Leakage Current	IGSS	VDS=0V, VGS = 20V			5	A
Gate-Source Leakage Current	IGSS	VDS=-50V, VGS=0V			-15	A
Gate-Source Leakage Current	IGSS	VDS=-25V, VGS=0V			-0.1	A
Gate-Threshold Voltage	VGS(th)	VDS=VGS, ID=-250A (Note 1)	-0.9		-2	V
Diode Forward Voltage	VSD	VGS=0V, IS=-0.13A (Note 1)			-2.2	V
Forward Transconductance	gFS	VDS=-25V, ID=-100mA (Note 1)		50		mS
Input Capacitance	Ciss	VDS=-25V,VGS=0V,f=1MHz (Note 2)		30		pF
Output Capacitance	Coss	VDS=-25V,VGS=0V,f=1MHz (Note 2)		10		pF
Reverse Transfer Capacitance	Crss	VDS=-25V,VGS=0V,f=1MHz (Note 2)		5		pF
Turn-On Delay Time	td(on)	VDS=-15V, RL=50, ID=-2.5A (Note 2)		2.5		ns
Turn-On Rise Time	tr	VDS=-15V, RL=50, ID=-2.5A (Note 2)		1		ns
Turn-Off Delay Time	td(off)	VDS=-15V, RL=50, ID=-2.5A (Note 2)		16		ns
Turn-Off Fall Time	tf	VDS=-15V, RL=50, ID=-2.5A (Note 2)		8		ns
Drain-Source On-Resistance	RDS(on)	VGS=-10V, ID=-0.1A (Note 1)		8	10
Drain-Source On-Resistance	RDS(on)	VGS=-10V, ID=-0.1A (Note 1)		6
Zero Gate Voltage Drain Current	IDSS	VDS=-50V, VGS=0V			-15	A
Zero Gate Voltage Drain Current	IDSS	VDS=-25V, VGS=0V			-0.1	A
Zero Gate Voltage Drain Current	IDSS	VGS=-5V, ID=-0.1A			-0.13	A
Zero Gate Voltage Drain Current	IDSS	VGS=-10V, ID=-0.1A			-0.52	A

Notes:
1. Pulse Test: Pulse Width 80s, Duty Cycle 0.5%.
2. Guaranteed by Design, Not Subject to Production Testing.

DIMENSIONS

DIM	INCHES	MM	NOTE
A	0.079 - 0.120	2.000 - 3.04
B	0.031 - 0.104	0.800 - 2.64
C	0.035 - 0.055	0.900 - 1.40
D	0.037 - 0.041	0.950 - 1.05
E	0.037 - 0.043	0.950 - 1.10
F	0.018 - 0.024	0.45 - 0.60
G	0.0004 - 0.006	0.01 - 0.15
H	0.035 - 0.043	0.90 - 1.10
J	0.003 - 0.007	0.08 - 0.18
K	0.012 - 0.020	0.30 - 0.51
L	0.020	0.50	0.007 / 0.20

Ordering Information

Device	Packing	Part Number
BSS84	Tape&Reel: 3Kpcs/Reel	Part Number-TP

Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF.

2410010204_MCC-BSS84-TP_C668884.pdf

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