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quality MCC BSS123K TP N Channel MOSFET Offering 100V Drain Source Voltage and 2KV ESD Protection Capability factory
quality MCC BSS123K TP N Channel MOSFET Offering 100V Drain Source Voltage and 2KV ESD Protection Capability factory

MCC BSS123K TP N Channel MOSFET Offering 100V Drain Source Voltage and 2KV ESD Protection Capability

Key Attributes
Model Number: BSS123K-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
280mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
9Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.7pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
780mW
Input Capacitance(Ciss):
32pF@50V
Gate Charge(Qg):
1.3nC
Mfr. Part #:
BSS123K-TP
Package:
SOT-23
Product Description

Product Overview

The BSS123K is an N-Channel MOSFET designed for various applications. It features ESD protection up to 2KV (HBM), a Moisture Sensitivity Level 1 rating, and is a Halogen Free, "Green" Device. The epoxy meets UL 94 V-0 flammability rating, and the device is Lead Free/RoHS Compliant. It operates within a junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI.COM
  • Product Code: BSS123K
  • Type: N-Channel MOSFET
  • Certifications: UL 94 V-0 Flammability Rating, Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant
  • ESD Protected Up To 2KV (HBM)
  • Moisture Sensitivity Level: 1

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Operating Junction Temperature Range -55 +150 C
Storage Temperature -55 +150 C
Thermal Resistance Junction to Ambient (Note 2) RJA 160 C/W
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 0.28 A
Drain Current-Pulsed (Note 3) IDM 1.12 A
Power Dissipation (Note 4) PD 0.78 W
Electrical Characteristics (Ta=25 unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.5 2.5 V
Gate-Body Leakage Current IGSS VGS= 20V, VDS=0V 10 A
Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V 1 A
Drain-Source On-Resistance RDS(on) VGS=10V, ID=0.25A 6 81
Input Capacitance Ciss VDS=50V,VGS=0V, f=1MHz 32 pF
Output Capacitance Coss VDS=50V,VGS=0V, f=1MHz 2.8 pF
Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, f=1MHz 1.7 pF
Total Gate Charge Qg VDS=50V,VGS=10V,ID=0.1A 1.3 nC
Gate-Source Charge Qgs VDS=50V,VGS=10V,ID=0.1A 0.28 nC
Gate-Drain Charge Qgd VDS=50V,VGS=10V,ID=0.1A 0.17 nC
Turn-On Delay Time td(on) VDD=50V,VGS=10V RG=6, ID=0.1A 3 ns
Turn-On Rise Time tr VDD=50V,VGS=10V RG=6, ID=0.1A 3 ns
Turn-Off Delay Time td(off) VDD=50V,VGS=10V RG=6, ID=0.1A 9 ns
Turn-Off Fall Time tf VDD=50V,VGS=10V RG=6, ID=0.1A 5 ns
Continuous Body Diode Current IS VGS=0V 0.28 A
Diode Forward Voltage VSD IS = 0.28A, VGS = 0V 1.3 V
Reverse Recovery Time trr IS = 0.1A, dI/dt = 100A/s 13 ns
Reverse Recovery Charge Qrr IS = 0.1A, dI/dt = 100A/s 4 nC
Gate Resistance Rg f=1MHz, Open drain 100

2411200033_MCC-BSS123K-TP_C2830387.pdf

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