Silicon N channel MOSFET transistor Minos MPF50N25 with 250V drain to source voltage and 50A current
Key Attributes
Model Number:
MPF50N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
55mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.7nF@25V
Pd - Power Dissipation:
310W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MPF50N25
Package:
TO-220F
Product Description
Product Overview
MPF50N25 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology to minimize conduction loss, improve switching performance, and enhance avalanche energy. This transistor is ideal for SMPS, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Description |
| VDS | 250 | V | Drain-to-Source Voltage |
| ID | 50 | A | Continuous Drain Current |
| ID (TC=100C) | 26 | A | Continuous Drain Current at 100C |
| IDM | 160 | A | Pulsed Drain Current |
| VGS | 30 | V | Gate-to-Source Voltage |
| EAS | 2000 | mJ | Single Pulse Avalanche Energy |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt |
| PD | 310 | W | Power Dissipation |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 300 | Maximum Temperature for Soldering | |
| RJC | 0.36 | /W | Junction-to-Case Thermal Resistance |
| RJA | 62.5 | /W | Junction-to-Ambient Thermal Resistance |
| RDS(ON) Typ | 0.055 | Drain-to-Source On-Resistance (Typical) | |
| VGS(TH) | 2.0 - 4.0 | V | Gate Threshold Voltage |
| Ciss | 3700 | PF | Input Capacitance |
| Coss | 360 | PF | Output Capacitance |
| Crss | 2.5 | PF | Reverse Transfer Capacitance |
| td(ON) | 80 | ns | Turn-on Delay Time |
| tr | 620 | ns | Rise Time |
| td(OFF) | 140 | ns | Turn-Off Delay Time |
| tf | 183 | ns | Fall Time |
| Qg | 40 | nC | Total Gate Charge |
| Qgs | 14 | nC | Gate to Source Charge |
| Qgd | 11 | nC | Gate to Drain (Miller) Charge |
| IS | 40 | A | Continuous Source Current (Body Diode) |
| ISM | 160 | A | Maximum Pulsed Current (Body Diode) |
| VSD | 1.2 | V | Diode Forward Voltage |
| Trr | 230 | ns | Reverse Recovery Time |
| Qrr | 2150 | nC | Reverse Recovery Charge |
2411120955_Minos-MPF50N25_C7429907.pdf
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