MDD Microdiode Semiconductor D882 NPN transistor designed for general purpose in SOT89 3L package
Key Attributes
Model Number:
D882
Product Custom Attributes
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
50MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
D882
Package:
SOT-89-3L
Product Description
Product Overview
The D882 is an NPN transistor in a SOT-89-3L package, designed for general-purpose applications. It offers power dissipation capabilities and is suitable for various electronic circuits.
Product Attributes
- Brand: microdiode.com
- Package Type: SOT-89-3L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 30 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current-Continuous | IC | 3 | A | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 0.5 | W | ||
| Thermal Resistance Junction To Ambient | RJA | 250 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 1 | A | ||
| Emitter cut-off current | IEBO | VEB=6V, IC=0 | 1 | A | ||
| Collector cut-off current | ICEO | VCE=30V, IB=0 | 10 | A | ||
| DC current gain | hFE(1) | VCE=2V, IB=0.2A | 30 | 400 | ||
| DC current gain | hFE(2) | VCE=2V, IC=1A | 60 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=2A, IB=0.2A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=2A, IB=0.2A | 1.5 | V | ||
| Transition frequency | fT | VCE=5V, IC=0.1A, f=10MHz | 50 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 45 | pF | ||
| hFE Rank Classification | ||||||
| Rank | Range | Min | Typ | Max | Unit | |
| R | 60-120 | 60 | 120 | |||
| O | 100-200 | 100 | 200 | |||
| Y | 160-320 | 160 | 320 | |||
| GR | 200-400 | 200 | 400 | |||
2408090958_MDD-Microdiode-Semiconductor-D882_C414036.pdf
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