MDD Microdiode Semiconductor BSS138 MOSFET designed for low leakage and voltage controlled switching
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@10V;2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.5pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
23.8pF@30V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is a 50V N-Channel Enhancement Mode MOSFET designed for a variety of applications including battery-operated systems, solid-state relays, and direct logic-level interfacing with TTL/CMOS. It features Trench Power MV MOSFET technology, offering voltage-controlled small signal switching with low input capacitance, fast switching speeds, and low input/output leakage. This device provides a cost-effective solution for voltage-controlled switching needs.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Electrical Characteristics | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 50 | -- | -- | V |
| Gate-Source Leakage Current | VDS=50V, VGS=0V | -- | -- | 1 | uA | |
| Drain-Source Leakage Current | VGS=20V, VDS=0V | -- | -- | 100 | nA | |
| Gate Threshold Voltage | VDS=VGS, ID=250A | 0.8 | 1.6 | -- | V | |
| Drain-Source On-State Resistance | VGS=10V, ID=300mA | -- | 2.5 | -- | ||
| Drain-Source On-State Resistance | VGS=4.5V, ID=200mA | -- | 3.0 | -- | ||
| Continuous Drain Current | ID | TA=25 | -- | -- | 340 | mA |
| Capacitance | Input Capacitance | VDS=25V, VGS=0V, f=1MHz | -- | 28.5 | -- | pF |
| Output Capacitance | VDS=25V, VGS=0V, f=1MHz | -- | 2.7 | -- | pF | |
| Reverse Transfer Capacitance | VDS=25V, VGS=0V, f=1MHz | -- | 1.78 | -- | pF | |
| Switching Characteristics | Turn on Delay Time | VDS=25V, VGS=10V, ID=300mA, RG=6 | -- | 2.6 | -- | ns |
| Turn on Rise Time | VDS=25V, VGS=10V, ID=300mA, RG=6 | -- | 18.8 | -- | ns | |
| Turn Off Delay Time | VDS=25V, VGS=10V, ID=300mA, RG=6 | -- | 9.7 | -- | ns | |
| Source Drain Diode | Source drain current(Body Diode) | ISD | -- | -- | 340 | mA |
| Source Drain Diode | Drain-Source Diode Forward Voltage | IS=300mA, VGS=0V | -- | 1.2 | -- | V |
2411211951_MDD-Microdiode-Semiconductor-BSS138_C427380.pdf
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