MDD Microdiode Semiconductor MDDG10R08G N Channel MOSFET 100V Power Trench Process and Soft Body Diode
Key Attributes
Model Number:
MDDG10R08G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Output Capacitance(Coss):
638pF
Input Capacitance(Ciss):
2nF
Pd - Power Dissipation:
69W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
MDDG10R08G
Package:
PDFN5x6-8L
Product Description
Product Overview
The MDDG10R08G is a 100V N-Channel Enhancement Mode MOSFET manufactured using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. This MOSFET is optimized for low on-state resistance and superior switching performance, featuring a best-in-class soft body diode and extremely low reverse recovery charge (Qrr). It is 100% UIS Tested and RoHS Compliant.
Product Attributes
- Brand: MDD Semiconductor
- Product Series: MDDG10R08G
- Technology: N-Channel Enhancement Mode MOSFET, Power Trench process, Shielded Gate technology
- Certifications: RoHS Compliant
- Testing: 100% UIS Tested
Technical Specifications
| Parameter | Symbol | Condition | Unit | Min | Typ | Max |
| Drain-Source Voltage | V DS | V | 100 | |||
| Gate-Source Voltage | V GS | V | -20 | +20 | ||
| Continuous Drain Current | I D | TA=25C unless otherwise noted | A | 75 | ||
| Pulsed Drain Current | I DM | A | 240 | |||
| Single Pulsed Avalanche Energy | E AS | TJ=25C, VDD=50V, VGS=10V, L= 0.5mH, Rg= 25, IAS =23A. | mJ | 130 | ||
| Power Dissipation | P D | TA=25C | W | 69 | ||
| Thermal Resistance, steady-state | R JA | C/W | 50 | |||
| Junction Temperature | T J | C | -55 | +150 | ||
| Storage Temperature | T stg | C | -55 | +150 | ||
| Drain-Source On-State Resistance | R DS(ON) | VGS=10V, ID=35A | m | 8 | ||
| Drain-Source On-State Resistance | R DS(ON) | VGS=4.5V, ID=30A | m | 7.7 | ||
| Gate Threshold Voltage | V GS(TH) | VDS=VGS, ID=250A | V | 1.5 | 2.0 | 2.5 |
| Drain-Source Leakage Current | I DSS | VDS=100V, VGS=0V | A | 1 | ||
| Gate-Source Leakage Current | I GSS | VGS=20V | nA | 100 | ||
| Source Drain Diode Forward Voltage | V SD | IS=30A, VGS=0V | V | 0.85 | ||
| Body Diode Reverse Recovery Time | t rr | IF=30A, di/dt=100A/s | ns | 50 | ||
| Body Diode Reverse Recovery Charge | Q rr | IF=30A, di/dt=100A/s | nC | 71 | ||
| Input Capacitance | C iss | VGS=0V, VDS=50V, f=1MHz | pF | 2000 | ||
| Output Capacitance | C oss | VGS=0V, VDS=50V, f=1MHz | pF | 638 | ||
| Reverse Transfer Capacitance | C rss | VGS=0V, VDS=50V, f=1MHz | pF | 21 | ||
| Gate Charge | Q g | VDS=50V, ID=30A, VGS=10V | nC | 10.3 | ||
| Gate Source Charge | Q gs | VDS=50V, ID=30A, VGS=10V | nC | 7.5 | ||
| Gate Drain Charge | Q gd | VDS=50V, ID=30A, VGS=10V | nC | 8 | ||
| Switching Characteristics (Turn on Delay Time) | t d(on) | VDD=50V, ID=30A, RG=2.7 | ns | 9 | 11 | |
| Switching Characteristics (Turn on Rise Time) | t r | VDD=50V, ID=30A, RG=2.7 | ns | 36 | ||
| Switching Characteristics (Turn Off Fall Time) | t f | VDD=50V, ID=30A, RG=2.7 | ns | 33 | ||
| Switching Characteristics (Turn Off Delay Time) | t d(off) | VDD=50V, ID=30A, RG=2.7 | ns | 10 |
Applications
- Synchronous Rectification for AC / DC Quick Charger
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- Battery Management System
2504281715_MDD-Microdiode-Semiconductor-MDDG10R08G_C48615220.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
