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quality High Voltage N Channel MOSFET MCC MCU20N06B TP with 60 Volt Drain Source Voltage and RoHS Compliance factory
quality High Voltage N Channel MOSFET MCC MCU20N06B TP with 60 Volt Drain Source Voltage and RoHS Compliance factory

High Voltage N Channel MOSFET MCC MCU20N06B TP with 60 Volt Drain Source Voltage and RoHS Compliance

Key Attributes
Model Number: MCU20N06B-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
25pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
500pF@30V
Pd - Power Dissipation:
-
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
MCU20N06B-TP
Package:
DPAK
Product Description

Product Overview

The MCU20N06B is an N-channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This MOSFET utilizes special process technology for high ESD capability and meets UL 94 V-0 flammability rating. It is also Moisture Sensitivity Level 1 compliant and available in Halogen Free upon request. The device is lead-free and RoHS compliant.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Product Type: N-Channel MOSFET
  • Package Type: DPAK (TO-252)
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes
  • Halogen Free: Available upon request (add "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Pulsed Drain Current IDM 72 A
Single Pulse Avalanche Energy EAS VDD=30V, L=0.5mH, RG=25, Starting TJ=25C 60 mJ
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance (Junction to Ambient) 100 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 2 3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 37 45 m
Input Capacitance Ciss VDS=48V,VGS=10V,ID=15A,f=1MHz 500 pF
Output Capacitance Coss VDS=48V,VGS=10V,ID=15A,f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=48V,VGS=10V,ID=15A,f=1MHz 25 pF
Total Gate Charge Qg VDD=30V, RG=3, ID=2A, VGS=10V 12 nC
Gate-Source Charge Qgs VDD=30V, RG=3, ID=2A, VGS=10V 4.1 nC
Gate-Drain Charge Qg VDD=30V, RG=3, ID=2A, VGS=10V 4.5 nC
Turn-On Delay Time td(on) VDD=30V, RG=3, ID=2A, VGS=10V 5 ns
Turn-On Rise Time tr VDD=30V, RG=3, ID=2A, VGS=10V 2.6 ns
Turn-Off Delay Time td(off) VDD=30V, RG=3, ID=2A, VGS=10V 16.1 ns
Turn-Off Fall Time tf VDD=30V, RG=3, ID=2A, VGS=10V 2.3 ns
Continuous Body Diode Current IS 20 A
Pulsed Diode Forward Current ISM 60 A
Body Diode Voltage VSD IS=20A, VGS=0V 1.2 V
DIMENSIONS INCHES MM NOTE
A 0.087 - 0.094 2.20 - 2.40
B 0.000 - 0.005 0.00 - 0.13
C 0.026 - 0.034 0.66 - 0.86
D 0.018 - 0.023 0.46 - 0.58
E 0.256 - 0.264 6.50 - 6.70
F 0.201 - 0.215 5.10 - 5.46
G 0.236 - 0.244 6.00 - 6.20
H 0.086 - 0.094 2.18 - 2.39
I 0.386 - 0.409 9.80 - 10.40
J 0.055 - 0.067 1.40 - 1.70
K 0.043 - 0.051 1.10 - 1.30
L 0.000 - 0.012 0.00 - 0.30
M 0.190 4.83 TYP.
O 0.114 2.90 TYP.
Q 0.063 1.60 TYP.
V 0.211 5.35 TYP.
Pin 1 Gate
Pin 2,4 Drain
Pin 3 Source

Ordering Information:

Device Packing Part Number
MCU20N06B Tape&Reel: 2.5Kpcs/Reel -TP

Note: Add "-HF" Suffix for Halogen Free.


2008182106_MCC-MCU20N06B-TP_C725299.pdf

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