Compact design Microdiode Semiconductor MDD06P03C P channel MOSFET 30V low RDS ON and fast switching
Key Attributes
Model Number:
MDD06P03C
Product Custom Attributes
Mfr. Part #:
MDD06P03C
Package:
SOT-23-3L
Product Description
Product Overview
The MDD06P03C is a 30V P-channel enhancement mode MOSFET featuring a unique device design for low RDS(ON), fast switching, and excellent avalanche characteristics. Its high-density cell design offers extremely low on-resistance and maximum DC current capability, making it suitable for portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Origin: Craftsman-Made Consciention Chip
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current (Note 1) | ID | TA=25°C | -6.0 | A | ||
| Pulsed Drain Current (Note 1) | IDM | -24.0 | A | |||
| Power Dissipation (Note 2) | IPD | Surface Mounted on FR4 Board, t<10 sec. | 1.25 | W | ||
| Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| Thermal Resistance, Junction-Ambient (Note 2) | RθJA | 100 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250μA | -30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=-30V, VGS=±20V | ±100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=-30V, VGS=0V | -1 | μA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250μA | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-6A | 27 | 37 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-6A | 30 | mΩ | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=-15V, ID=-6A, RG=3.3Ω, VGS=-10V | 9 | 13 | ns | |
| Turn on Rise Time | tr | VDS=-15V, ID=-6A, RG=3.3Ω, VGS=-10V | 12 | 22 | ns | |
| Turn Off Fall Time | tf | VDS=-15V, ID=-6A, RG=3.3Ω, VGS=-10V | 35 | ns | ||
| Turn Off Delay Time | td(off) | VDS=-15V, ID=-6A, RG=3.3Ω, VGS=-10V | ns | |||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=-6A, VGS=0V | -0.8 | -1.2 | V | |
| Source drain current(Body Diode) | ISD | A | ||||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHz | 890 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1.0MHz | 111 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1.0MHz | 90 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, ID=-6A, VGS=-10V | 3.9 | nC | ||
| Gate Source Charge | Qgs | VDS=-15V, ID=-6A, VGS=-10V | 25 | nC | ||
| Gate Drain Charge | Qgd | VDS=-15V, ID=-6A, VGS=-10V | 4.8 | nC | ||
2512021845_MDD-Microdiode-Semiconductor-MDD06P03C_C53069233.pdf
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