MDD Microdiode Semiconductor MDD2303 P Channel Enhancement Mode MOSFET for Power Management and Switching
Key Attributes
Model Number:
MDD2303
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
RDS(on):
72mΩ@10V;103mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Input Capacitance(Ciss):
226pF
Pd - Power Dissipation:
250mW
Output Capacitance(Coss):
87pF
Gate Charge(Qg):
5.8nC@10V
Mfr. Part #:
MDD2303
Package:
SOT-23
Product Description
Product Overview
The MDD2303 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including load switches, switching circuits, high-speed line drivers, and power management functions. This device offers low RDS(on) at VGS=-10V, logic level control at -5V, and comes in a Pb-free, RoHS compliant SOT23 package.
Product Attributes
- Product Name: MDD2303
- Channel Type: P-Channel Enhancement Mode
- Package: SOT23
- Compliance: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | (TA=25 unless otherwise noted) | -30 | V | ||
| VGS | 20 | V | ||||
| ID | -3.0 | A | ||||
| PD | 0.25 | W | ||||
| RJA | Junction to Ambient | 500 | /W | |||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage, VGS=0V, ID=250A | -30 | V | ||
| IDSS | Gate-Source Leakage Current, VDS=-30V, VGS=0V | -1 | uA | |||
| IGSS | Drain-Source Leakage Current, VDS=20V, VDS=0V | 100 | nA | |||
| VGS(TH) | Gate Threshold Voltage, VDS=VGS, ID=-250A | -1.2 | -2.5 | V | ||
| On-State Resistance | RDS(ON) | VGS=-10V, ID=-2A, TA=25 | 92 | m | ||
| RDS(ON) | VGS=-4.5V, ID=-1.5A, TA=25 | 145 | m | |||
| Capacitance | Ciss | Input Capacitance, VDS=-15V, VGS=0V, f=1MHz | 226 | pF | ||
| Coss | Output Capacitance | 87 | pF | |||
| Crss | Reverse Transfer Capacitance | 19 | pF | |||
| Gate Charge | Qg | Total Gate Charge, VDS=-15V, VGS=-10V, ID=-1A | 5.8 | nC | ||
| Qgs | Gate Source Charge | 0.8 | nC | |||
| Qgd | Gate Drain Charge | 1.5 | nC | |||
| Switching Characteristics | td(on) | Turn on Delay Time, VDS=-15V, VGS =-10V, ID=-1A, RG=6.0 | 9 | ns | ||
| tr | Turn on Rise Time | 9 | ns | |||
| td(off) | Turn Off Delay Time | 18 | ns | |||
| tf | Turn Off Fall Time | 6 | ns | |||
| Source Drain Diode Characteristics | ISD | Source drain current(Body Diode) | -2 | A | ||
| VSD | Drain-Source Diode Forward Voltage, IS=-4A, VGS=0V | -0.88 | -1.2 | V |
2507221720_MDD-Microdiode-Semiconductor-MDD2303_C49383130.pdf
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