60V Power MOSFET Minos MDT80N06D Featuring Low Rdson and High ESD Capability for Switching Performance
Key Attributes
Model Number:
MDT80N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
240pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
3nF@30V
Pd - Power Dissipation:
107W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MDT80N06D
Package:
TO-252-2L
Product Description
Product Overview
The MDT80N06D is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS-KX (derived from www.mns-kx.com)
- Origin: Shenzhen Minos (derived from contact information)
- Package: TO-252-2L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | 60 | V | |
| Gate-Source Voltage | VGS | - | - | ±20 | V | |
| Drain Current-Continuous | ID | - | - | 80 | A | |
| Drain Current-Pulsed | IDM | (Note 1) | - | - | 320 | A |
| Maximum Power Dissipation | PD | (Tc=25) | - | - | 107 | W |
| Single pulse avalanche energy | EAS | (Note 2) | - | - | 280 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | - | 1.4 | - | /W | |
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A (Note 3) | - | 7 | 8 | mΩ |
| Forward Transconductance | gFS | VDS=10V,ID=20A | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 3000 | - | pF |
| Output Capacitance | Coss | - | 270 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 240 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=3Ω | - | 8.5 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Turn-Off Fall Time | tf | - | 15 | - | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=40A, VGS=10V | - | 72 | - | nC |
| Gate-Source Charge | Qgs | - | 21.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 28 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=80A | - | - | 1.2 | V |
2410122125_Minos-MDT80N06D_C19272215.pdf
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