Silicon N Channel Power MOSFET Minos MP5N50 Designed for Power Switching and Adapter Charger Circuits
Key Attributes
Model Number:
MP5N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.25Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
657pF@25V
Pd - Power Dissipation:
38W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
MP5N50
Package:
TO-220
Product Description
Product Overview
The MP5N50 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications including power switching, adapters, and chargers. Key features include a VDS of 500V, ID of 5A, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China ()
- Material: Silicon N-Channel Power MOSFET
- Certifications: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit | |
| Electrical Characteristics | Drain-source Voltage (VDS) | VGS =0V, ID=250A | 500 | V | ||
| Static Drain-to-Source on-Resistance (RDS(on)) | VGS =10V, ID=2.5A | 1.25 | 1.50 | |||
| Gated Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 2.0 | 3.3 | 4.0 | V | |
| Drain to Source leakage Current (IDSS) | VDS=500V, VGS = 0V | 1.0 | A | |||
| Gated Body Foward Leakage (IGSS(F)) | VGS = +30V | 100 | nA | |||
| Gated Body Reverse Leakage (IGSS(R)) | VGS = -30V | -100 | nA | |||
| Input Capacitance (Ciss) | VGS =0V, VDS=25V, f=1.0MHZ | 657 | pF | |||
| Output Capacitance (Coss) | 57 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 13 | pF | ||||
| Single Pulse Avalanche Energy (EAS) | 88 | mJ | ||||
| Switching Characteristics | Turn-on Delay Time (td(off)) | VDD=250V,ID=5A, RG=25 | 20 | nS | ||
| Total Gate Charge (Qg) | VDS=400V ID=5A VGS=10V | 26 | nC | |||
| Gate-Source Charge (Qgs) | 4 | nC | ||||
| Gate-Drain Charge (Qgd) | 15 | nC | ||||
| Reverse Recovery Time (trr) | TJ=25,IF=5A di/dt=100A/us | 220 | nS | |||
| Source-Drain Diode Characteristics | S-D Current(Body Diode) (ISD) | 5 | A | |||
| Reverse Recovery Charge (Qrr) | 1 | C | ||||
| Absolute Maximum Ratings | Drain-to-Source Breakdown Voltage (VDSS) | 500 | V | |||
| Drain Current (continuous) at Tc=25 (ID) | 5 | A | ||||
| Drain Current (pulsed) (IDM) | 20 | A | ||||
| Gate to Source Voltage (VGS) | +/-30 | V | ||||
| Total Dissipation at Tc=25 (Ptot) | 38 | W | ||||
| Max. Operating Junction Temperature (Tj) | -55~150 |
2410122013_Minos-MP5N50_C5452754.pdf
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