MDD Microdiode Semiconductor MDD3401A P Channel MOSFET suitable for power switching and load control

Key Attributes
Model Number: MDD3401A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
65mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
655pF@15V
Gate Charge(Qg):
8.5nC@15V
Mfr. Part #:
MDD3401A
Package:
SOT-23-3
Product Description

Product Overview

The MDD3401A is a -30V P-Channel Enhancement Mode MOSFET designed for load and power switching applications. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, making it suitable for interfacing and switching applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Absolute Maximum RatingsVDS-30V
VGS12V
ID(TA=25)-4.2A
PD(Note 2)1.2W
RJA(Note 2)80/W
TJ,Tstg-50150
IDM(Note 1)-16A
Electrical CharacteristicsV(BR)DSSVGS=0V, ID=-250A-30V
IDSSVDS=-30V, VGS=0V-1uA
IGSSVGS=12V, VDS=0V100nA
VGS(TH)VDS=VGS, ID=-250A-0.5-1.2V
On-State ResistanceRDS(ON)VGS=-10V, ID=-4.1A4555m
RDS(ON)VGS=-4.5V, ID=-4A5065m
Dynamic Electrical CharacteristicsCissVDS=-15V, VGS=0V, f=1MHz655pF
Coss65pF
Crss53pF
Switching Characteristicstd(on)VDS=-15V, VGS =-10V, ID=-3A, RG=67ns
tr3.8ns
td(off)35ns
tf10.5ns
Source Drain Diode CharacteristicsISD-2A
VSDIS=-1A, VGS=0V-1V

2408090958_MDD-Microdiode-Semiconductor-MDD3401A_C5299415.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.