200 milliwatt planar die zener diode MCC BZT52C13S-TP suitable for automated assembly and medium current applications

Key Attributes
Model Number: BZT52C13S-TP
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
12.4V~13.1V
Zener Voltage(Nom):
13V
Impedance(Zzk):
170Ω
Mfr. Part #:
BZT52C13S-TP
Package:
SOD-323
Product Description

Product Overview

The MCCSEMI 200 mW Zener Diode series offers a comprehensive range of voltage options from 2.4 to 56 Volts, designed for general-purpose medium current applications. These diodes feature a planar die construction, making them ideally suited for automated assembly processes. They are Halogen Free, RoHS Compliant, and meet MSL 1 and UL 94 V-0 flammability ratings, ensuring suitability for modern electronic designs.

Product Attributes

  • Brand: MCCSEMI
  • Device Type: Zener Diode
  • Power Dissipation: 200 mW
  • Construction: Planar Die
  • Assembly Suitability: Automated Assembly Processes
  • Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant
  • Moisture Sensitivity Level: 1
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Suffix for RoHS Compliance: "P"

Technical Specifications

MCC Part Number Zener Voltage (V) MIN Zener Voltage (V) NOM Zener Voltage (V) MAX IZT (mA) ZZT () IZK (mA) ZZK () IR(Max) (A) VR (V) Marking Code Typical Temperature Coefficent @IZTC (mV/)
BZT52C2V4S 2.28 2.4 2.56 5 100 1.0 600 50 1.0 WX -3.5
BZT52C2V7S 2.5 2.7 2.9 5 100 1.0 600 20 1.0 W1 -3.5
BZT52C3V0S 2.8 3.0 3.2 5 95 1.0 600 10 1.0 W2 -3.5
BZT52C3V3S 3.1 3.3 3.5 5 95 1.0 600 5 1.0 W3 -3.5
BZT52C3V6S 3.4 3.6 3.8 5 90 1.0 600 5 1.0 W4 -3.5
BZT52C3V9S 3.7 3.9 4.1 5 90 1.0 600 3 1.0 W5 -3.5
BZT52C4V3S 4.0 4.3 4.6 5 90 1.0 600 3 1.0 W6 -3.5
BZT52C4V7S 4.4 4.7 5.0 5 80 1.0 500 3 2.0 W7 -3.5
BZT52C5V1S 4.8 5.1 5.4 5 60 1.0 480 2 2.0 W8 -2.7
BZT52C5V6S 5.2 5.6 6.0 5 40 1.0 400 1 2.0 W9 -2.0
BZT52C6V2S 5.8 6.2 6.6 5 10 1.0 150 3 4.0 WA 0.4
BZT52C6V8S 6.4 6.8 7.2 5 15 1.0 80 2 4.0 WB 1.2
BZT52C7V5S 7.0 7.5 7.9 5 15 1.0 80 1 5.0 WC 2.5
BZT52C8V2S 7.7 8.2 8.7 5 15 1.0 80 0.7 5.0 WD 3.2
BZT52C9V1S 8.5 9.1 9.6 5 15 1.0 100 0.5 6.0 WE 3.8
BZT52C10S 9.4 10 10.6 5 20 1.0 150 0.2 7.0 WF 4.5
BZT52C11S 10.4 11 11.6 5 20 1.0 150 0.1 8.0 WG 5.4
BZT52C12S 11.4 12 12.7 5 25 1.0 150 0.1 8.0 WH 6.0
BZT52C13S 12.4 13 14.1 5 30 1.0 170 0.1 8.0 WI 7.0
BZT52C15S 13.8 15 15.6 5 30 1.0 200 0.1 10.5 WJ 9.2
BZT52C16S 15.3 16 17.1 5 40 1.0 200 0.1 11.2 WK 10.4
BZT52C18S 16.8 18 19.1 5 45 1.0 225 0.1 12.6 WL 12.4
BZT52C20S 18.8 20 21.2 5 55 1.0 225 0.1 14.0 WM 14.4
BZT52C22S 20.8 22 23.3 5 55 1.0 250 0.1 15.4 WN 16.4
BZT52C24S 22.8 24 25.6 5 70 1.0 250 0.1 16.8 WO 18.4
BZT52C27S 25.1 27 28.9 2 80 0.5 300 0.1 18.9 WP 21.4
BZT52C30S 28 30 32 2 80 0.5 300 0.1 21.0 WQ 24.4
BZT52C33S 31 33 35 2 80 0.5 325 0.1 23.1 WR 27.4
BZT52C36S 34 36 38 2 90 0.5 350 0.1 25.2 WS 30.4
BZT52C39S 37 39 41 2 130 0.5 350 0.1 27.3 WT 33.4
BZT52C43S 40 43 46 2 100 0.5 700 0.1 32.0 WU 10.0
BZT52C47S 44 47 50 2 100 0.5 750 0.1 35.0 WV 10.0
BZT52C51S 48 51 54 2 100 0.5 750 0.1 38.0 WW 10.0
BZT52C56S 53 56 59 2 200 0.5 400 0.05 39.2 X1 10.0
Parameter Conditions Symbol MIN MAX
Maximum Forward Voltage IF=10mA VF 0.9V
Power Dissipation PD 200mW
Operating Junction Temperature Range -65C +150C
Storage Temperature Range -65C +150C
Thermal Resistance Junction to Ambient 625C/W
DIM INCHES MM
A 0.090 - 0.107 2.30 - 2.70
B 0.063 - 0.071 1.60 - 1.80
C 0.045 - 0.053 1.15 - 1.35
D 0.031 - 0.045 0.80 - 1.15
E 0.010 - 0.016 0.25 - 0.40
G 0.004 - 0.018 0.10 - 0.45
H 0.004 - 0.010 0.10 - 0.25
J ----- 0.006 - 0.15

Suggested Solder Pad Layout: 1.88mm x 0.69mm x 0.56mm

Device Part Number Packing
BZT52C2V4S THRU BZT52C56S

Part Number-TP

Tape&Reel: 3Kpcs/Reel

2409302332_MCC-BZT52C13S-TP_C2987035.pdf

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