High Current Switching Power MOSFET Minos MPT028N10 Featuring Double Trench Technology for Efficiency
Key Attributes
Model Number:
MPT028N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
110pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
9.2nF@50V
Pd - Power Dissipation:
250W
Gate Charge(Qg):
131nC@10V
Mfr. Part #:
MPT028N10
Package:
TO-220
Product Description
Product Description
The MPT028N10 is an N-channel Enhanced Power MOSFET designed using advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Certifications: RoHS
Technical Specifications
| Ordering Code | Package | Product Code | VDS (V) | RDS(on) @VGS=10V, ID=180A (m) | ID (A) | EAS (mJ) | PD (W) |
| MPT028N10-P | TO-220 | 028N10 | 100 | <3 (Typ: 2.7) | 180 | 784 | 250 |
| MPT028N10-S | TO-263 | 028N10 | 100 | <3 (Typ: 2.7) | 180 | 784 | 250 |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | 110 | -- | V |
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V | -- | -- | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V @TC=125C | -- | -- | 100 | A |
| IGSS(F) | Gate-Source Forward Leakage | VGS=+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate-Source Reverse Leakage | VGS=-20V | -- | -- | -100 | nA |
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=50A | -- | 2.7 | 3 | m |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| Ciss | Input Capacitance | VDS=50V, VGS=0, f=1MHz | -- | 9200 | -- | pF |
| Coss | Output Capacitance | VDS=50V, VGS=0, f=1MHz | -- | 1130 | -- | pF |
| Crss | Reverse Transfer Capacitance | VDS=50V, VGS=0, f=1MHz | -- | 110 | -- | pF |
| Qg | Total Gate Charge | VDD=50V, ID=92.5A, VGS=10V | -- | 131 | -- | nC |
| Qgs | Gate-Source charge | VDD=50V, ID=92.5A, VGS=10V | -- | 50 | -- | nC |
| Qgd | Gate-Drain charge | VDD=50V, ID=92.5A, VGS=10V | -- | 24.5 | -- | nC |
| td(on) | Turn-On Delay Time | VDD=50V, VGS=10V, RG=1.6, Resistive Load | -- | 32 | -- | ns |
| tr | Rise Time | VDD=50V, VGS=10V, RG=1.6, Resistive Load | -- | 40 | -- | ns |
| td(off) | Turn-Off Delay Time | VDD=50V, VGS=10V, RG=1.6, Resistive Load | -- | 80 | -- | ns |
| tf | Fall Time | VDD=50V, VGS=10V, RG=1.6, Resistive Load | -- | 35 | -- | ns |
| IS | Continuous Source Current | -- | -- | -- | 180 | A |
| VSD | Diode Forward Voltage | VGS=0V, IS=50A | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | Is=92.5A di/dt=100A/us | -- | 80 | -- | ns |
| Qrr | Reverse Recovery Charge | Is=92.5A di/dt=100A/us | -- | 195 | -- | uC |
2409302201_Minos-MPT028N10_C5240682.pdf
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