Silicon N Channel Enhanced MOSFET Minos MP3205 for synchronous rectification inverter systems and switching
Key Attributes
Model Number:
MP3205
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
110A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
211pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.247nF@25V
Pd - Power Dissipation:
210W
Gate Charge(Qg):
146nC
Mfr. Part #:
MP3205
Package:
TO-220
Product Description
Product Description
The MP3205 is a silicon N-Channel Enhanced MOSFET designed using advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS-KX (www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| ABSOLUTE RATINGS | ||||||
| Drain-to-Source Voltage (VDSS) | 55 | V | ||||
| Continuous Drain Current (ID) | 110 | A | TC = 25C | |||
| Continuous Drain Current (ID) | 80 | A | TC = 100C | |||
| Pulsed Drain Current (IDM) | 440 | A | (Note1) | |||
| Gate-to-Source Voltage (VGS) | ±20 | V | ||||
| Single Pulse Avalanche Energy (EAS) | 1500 | mJ | (Note2) | |||
| Avalanche Current (IAR) | 25 | A | ||||
| Repetitive Avalanche Current (EAR) | 20 | mJ | ||||
| Peak Diode Recovery dv/dt | 5.0 | V/ns | (Note3) | |||
| Power Dissipation (PD) | 210 | W | TO-220 | |||
| Derating Factor above 25C | 1.25 | W/ | ||||
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 175 | |||||
| Maximum Temperature for Soldering (TL) | 300 | |||||
| Thermal Characteristics | ||||||
| Junction-to-Case Thermal Resistance (RθJC) | 0.75 | /W | (No FullPAK) | |||
| Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 | /W | TO-220 | |||
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage (BVDSS) | 55 | V | VGS=0V, ID=250µA | |||
| Bvdss Temperature Coefficient (ΔBVDSS/ΔTJ) | 0.055 | V/ | ID=250uA, Reference25 | |||
| Drain to Source Leakage Current (IDSS) | 1 | µA | VDS=55V, VGS= 0V, Tj = 25 | 1 | ||
| Drain to Source Leakage Current (IDSS) | 10 | µA | VDS=44V, VGS= 0V, Tj = 125 | 10 | ||
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS =+20V | 100 | ||
| Gate to Source Reverse Leakage (IGSS(R)) | 100 | nA | VGS =-20V | 100 | ||
| ON Characteristics | ||||||
| Drain-to-Source On-Resistance (RDS(ON)) | 9 | mΩ | VGS=10V, ID=40A | 7.2 | 9 | |
| Gate Threshold Voltage (VGS(TH)) | 4 | V | VDS = VGS, ID = 250µA | 2 | 4 | |
| Forward Transconductance (gfs) | 65 | S | VDS=20V, ID =40A(Note4) | 65 | ||
| Dynamic Characteristics | ||||||
| Gate resistance (Rg) | 1.7 | Ω | f = 1.0MHz | 1.7 | ||
| Input Capacitance (Ciss) | 3247 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 3247 | ||
| Output Capacitance (Coss) | 781 | pF | 781 | |||
| Reverse Transfer Capacitance (Crss) | 211 | pF | 211 | |||
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (Body Diode) (IS) | 110 | A | TC=25 °C | 110 | ||
| Maximum Pulsed Current (Body Diode) (ISM) | 440 | A | 440 | |||
| Diode Forward Voltage (VSD) | 1.3 | V | IS=62A, VGS=0V | 0.9 | 1.3 | |
| Switching Characteristics | ||||||
| Turn-on Delay Time (td(ON)) | 14 | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 14 | ||
| Rise Time (tr) | 101 | ns | 101 | |||
| Turn-Off Delay Time (td(OFF)) | 50 | ns | 50 | |||
| Fall Time (tf) | 65 | ns | 65 | |||
| Total Gate Charge (Qg) | 146 | nC | ID =62A, VDD =44V, VGS = 10V | 146 | ||
| Gate to Source Charge (Qgs) | 10 | nC | 10 | |||
| Gate to Drain (Miller)Charge (Qgd) | 17.5 | nC | 17.5 | |||
| Reverse Recovery Time (trr) | 69 | ns | IS=62A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 69 | ||
| Reverse Recovery Charge (Qrr) | 143 | nC | 143 | |||
2410122024_Minos-MP3205_C2980269.pdf
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