Electronic switching transistor MDD Microdiode Semiconductor S9014 NPN type in compact SOT23 package
Key Attributes
Model Number:
S9014
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9014
Package:
SOT-23
Product Description
Product Overview
The S9014 is a general-purpose NPN transistor in a SOT-23 plastic package. It is complementary to the S9015 and is suitable for various electronic applications requiring amplification or switching.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Marking: J6
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 100 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta= 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=50V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=3V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=5V, IC=1mA | 200 | 1000 | ||
| IC=100mA, IB=5mA | ||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=5mA | 1 | V | ||
| Transition frequency | fT | VCE=5V, IC=10mA | 150 | MHz | ||
| f=30MHz | ||||||
| Collector cut-off current | ICEO | VCE=35V, IB=0 | 1 | A | ||
| Thermal Resistance | RJA | From Junction To Ambient | 625 | /W | ||
| hFE CLASSIFICATION | ||||||
| Rank | L | Range | 200-450 | |||
| Rank | H | Range | 450-1000 | |||
2411211938_MDD-Microdiode-Semiconductor-S9014_C364316.pdf
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