MDD Microdiode Semiconductor BC817-25 NPN transistor designed for performance in general AF circuits
Key Attributes
Model Number:
BC817-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC817-25
Package:
SOT-23
Product Description
Product Overview
The BC817 is a general-purpose NPN transistor in a SOT-23 plastic-encapsulated package. It is designed for general AF applications and offers high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).
Product Attributes
- Brand: microdiode
- Package Type: SOT-23
- Transistor Type: NPN
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Maximum Ratings | VCBO | 50 | V | ||
| VCEO | 45 | V | |||
| VEBO | 5 | V | |||
| IC | 0.5 | A | |||
| Ptot | (Ta=25) | 300 | mW | ||
| Tj | 150 | OC | |||
| Tstg | -55 | +150 | OC | ||
| Electrical Characteristics | VCBO | IC= 10A, IE=0 | 50 | V | |
| VCEO | IC= 10mA, IB=0 | 45 | V | ||
| VEBO | IE= 1A, IC=0 | 5 | V | ||
| ICBO | VCB= 45 V , IE=0 | 0.1 | A | ||
| IEBO | VEB=4V, IC=0 | 0.1 | A | ||
| DC Current Gain (hFE) | VCE=1V, IC=100mA | 100 | 600 | ||
| VCE=1V, IC=500mA | 40 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC= 500mA, IB= 50mA | 0.7 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC= 500mA, IB= 50mA | 1.2 | V | |
| Base-emitter voltage | VBE | VCE= 1 V, IC= 500mA | 1.2 | V | |
| Collector capacitance | Cob | VCB=10V ,f=1MHz | 10 | pF | |
| Transition frequency | fT | VCE= 5 V, IC=10mA f=100MHz | 100 | MHz | |
| Thermal Resistance | RJA | From Junction To Ambient | 417 | OC/W |
2509111015_MDD-Microdiode-Semiconductor-BC817-25_C2858531.pdf
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