Power MOSFET Megain MGC031N06N featuring 240 amp pulsed drain current and green device certification
Key Attributes
Model Number:
MGC031N06N
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
85A
RDS(on):
3.1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF
Output Capacitance(Coss):
1.175nF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
3.509nF
Gate Charge(Qg):
59nC@10V
Mfr. Part #:
MGC031N06N
Package:
PDFN5x6-8
Product Description
Product Overview
The MGC031N06N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low gate charge and low RDS(ON). It is 100% EAS Guaranteed and available in a Green Device option. This MOSFET is ideal for applications such as Motor Control, DC/DC Converters, and Synchronous rectifier applications.
Product Attributes
- Brand: Mega
- Origin: China
- Material: N-MOSFET
- Certifications: Green Device Available
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Units | |
|---|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V | ||||
| V | ||||||
| V | ||||||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| V | ||||||
| Drain Current - Continuous (ID) | (TC=25) | 85 | A | |||
| (TC=100) | 66 | A | ||||
| Pulsed Drain Current (IDM) | 240 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 101 | mJ | ||||
| Avalanche Current (IAS) | 45 | A | ||||
| Total Power Dissipation (PD) | (TC=25C) | 83 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 60 | - | - | V | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, ID=20A | 3.1 | 3.6 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 2 | - | 4 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V TJ=25 | - | - | 1 | uA | |
| VDS=48V, VGS=0V TJ=55 | - | - | 5 | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V, VDS=0V | - | - | &plus100; | nA | |
| Forward Transconductance (gfs) | VDS=5V,ID=20A | - | 65 | - | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | - | 1.0 | - | ||
| Total Gate Charge (Qg) | (10V) VDS=30V, VGS=10V ID=20A | - | 59 | - | nC | |
| Gate-Source Charge (Qgs) | - | 15 | - | |||
| Gate-Drain Charge (Qgd) | - | 10 | - | |||
| Switching Times | Turn-on Delay Time (Td(ON)) | - | 20 | - | nS | |
| Turn-on Rise Time (Tr) | - | 9 | - | |||
| Turn-off Delay Time (Td(OFF)) | - | 60 | - | |||
| Turn-off Fall Time (Tf) | - | 15 | - | |||
| Capacitance | Input Capacitance (Ciss) | (10V) VDS=30V, VGS=10V ID=20A f=1MHz | - | 3509 | - | pF |
| Output Capacitance (Coss) | - | 1175 | - | |||
| Reverse Transfer Capacitance (Crss) | - | 68 | - | |||
| Continuous Source Current (IS) | VG=VD=0V,Force Current | - | - | 85 | A | |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A,TJ=25 | - | - | 1.2 | V | |
| Diode Characteristics | Reverse Recovery Time (trr) | IF=20A , dI/dt=100A/ s , TJ=25 | - | 24 | - | nS |
| Reverse Recovery Charge (Qrr) | - | 85 | - |
2506251635_Megain-MGC031N06N_C49242753.pdf
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