power switching Minos IRF1407 80V N Channel Power MOSFET with low gate charge and high EAS stability in TO 220 package
Key Attributes
Model Number:
IRF1407
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
810pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.2nF@25V
Pd - Power Dissipation:
270W
Gate Charge(Qg):
257nC@10V
Mfr. Part #:
IRF1407
Package:
TO-220
Product Description
Product Overview
The IRF1407 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide array of applications including power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-220 package is designed for efficient heat dissipation.
Product Attributes
- Brand: MNS-KX (implied from URL)
- Origin: Shenzhen Minos (implied from contact info)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 200 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 800 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 270 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 1600 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 0.41 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=50A (Note 3) | - | 3.5 | 4 | mΩ |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 17 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 13200 | - | pF |
| Output Capacitance | Coss | - | 950 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 810 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 20 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 50 | - | nS | |
| Turn-Off Fall Time | tf | 18 | - | - | nS | |
| Total Gate Charge | Qg | VDS=64V,ID=80A, VGS=10V | - | 257 | - | nC |
| Gate-Source Charge | Qgs | - | 76 | - | nC | |
| Gate-Drain Charge | Qg | - | 80 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=80A | - | - | 1.2 | V |
2410122012_Minos-IRF1407_C33129604.pdf
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