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quality load switching using MIRACLE POWER MU4001Y P Channel Enhancement Mode MOSFET with low on resistance factory
quality load switching using MIRACLE POWER MU4001Y P Channel Enhancement Mode MOSFET with low on resistance factory

load switching using MIRACLE POWER MU4001Y P Channel Enhancement Mode MOSFET with low on resistance

Key Attributes
Model Number: MU4001Y
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
9.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
288pF
Output Capacitance(Coss):
330pF
Pd - Power Dissipation:
38W
Input Capacitance(Ciss):
3.8nF
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
MU4001Y
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The MU4001Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Miracle Technology. It offers robust performance with a -40V drain-source voltage and -40A continuous drain current, boasting a low typical on-resistance of 7.7m at VGS = -10V. This MOSFET is designed for efficiency with low gate charge and is 100% UIS and DVDS tested for reliability. It is also a lead-free product. Ideal applications include load switching, PWM applications, and power management scenarios requiring efficient power control.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Miracle Technology
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Certifications: Lead-free product acquired

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - -40 V
VGS Gate-Source Voltage TC = 25C unless otherwise noted - - 20 V
ID Drain Current-Continuous TC = 25C - - -40 A
ID Drain Current-Continuous TC = 100C - - -26 A
IDM Drain Current-Pulsed - - - -160 A
PD Maximum Power Dissipation TC = 25C - - 38 W
EAS Single Pulsed Avalanche Energy - - - 144 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - - 3.3 C/W
RJA Thermal Resistance, Junction to Ambient - - - 37 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250A -40 - - V
IDSS Zero Gate Voltage Drain Current VDS = -40V, VGS = 0V - - -1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250A -1.0 -1.5 -2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = -10V, ID = -20A - 7.7 9.4 m
RDS(on) Static Drain-Source On-Resistance VGS = -4.5V, ID = -10A - 9.3 11.5 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 9.5 -
Ciss Input Capacitance VDS = -20V, VGS = 0V, f = 1.0MHz - 3800 - pF
Coss Output Capacitance - - 330 - pF
Crss Reverse Transfer Capacitance - - 288 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -20V, VGS = -10V, ID = -20A, RGEN = 2.4 - 11 - ns
tr Turn-On Rise Time - - 81 - ns
td(off) Turn-Off Delay Time - - 92 - ns
tf Turn-Off Fall Time - - 73 - ns
Qg Total Gate Charge VDS = -20V, VGS = -10V, ID = -20A - 68 - nC
Qgs Gate-Source Charge - - 10 - nC
Qgd Gate-Drain Charge - - 14 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - -40 A
ISM Maximum Pulsed Current - - - -160 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -35A - - -1.2 V
Trr Body Diode Reverse Recovery Time IF = -30A, dIF/dt = -100A/s - 20 - ns
Qrr Body Diode Reverse Recovery Charge IF = -30A, dIF/dt = -100A/s - 13 - nC

2504151445_MIRACLE-POWER-MU4001Y_C47361177.pdf

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