N Channel MOSFET with Low Gate Charge and RDS on MCC MCU60N04A TP Featuring Split Gate Trench Design

Key Attributes
Model Number: MCU60N04A-TP
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
170pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
1.65nF@20V
Pd - Power Dissipation:
70W
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
MCU60N04A-TP
Package:
DPAK
Product Description

Product Overview

The MCU60N04A is an N-CHANNEL MOSFET designed with Split Gate Trench Power MV MOSFET technology. It features low RDS(on) and low gate charge, making it suitable for various power applications. The device meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available in a Lead Free Finish/RoHS Compliant version. Halogen Free options are available upon request.

Product Attributes

  • Brand: MCCSEMI
  • Technology: N-CHANNEL MOSFET, Split Gate Trench Power MV MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes (indicated by "P" suffix)
  • Halogen Free: Available upon request (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance Junction to Case 2.15 C/W
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 60 A
Drain Current-Pulsed ID 240 A
Single Pulsed Avalanche Energy (Note 1) EAS 400 mJ
Power Dissipation PD 70 W
Electrical Characteristics (Ta=25 unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 40 V
Gate-Threshold Voltage (Note 2) VGS(th) VDS=VGS, ID=250A 0.9 2.0 V
Gate-Body Leakage Current IGSS VGS = 20V, VDS =0V 100 nA
Zero Gate Voltage Drain Current IDSS VDS =40V, VGS =0V 1 A
Drain-Source On-Resistance (Note 2) RDS(on) VGS=10V, ID=20A 5.4 7.0 m
Forward Transconductance (Note 2) gFS VDS=25V, ID=20A 24 S
Dynamic Characteristics (Note 3)
Input Capacitance Ciss VDS=20V,VGS=0V, f=1MHz 1650 pF
Output Capacitance Coss VDS=20V,VGS=0V, f=1MHz 240 pF
Reverse Transfer Capacitance Crss VDS=20V,VGS=0V, f=1MHz 170 pF
Total Gate Charge Qg VDS=20V,VGS=10V,ID=20A 27 nC
Gate-Source Charge Qgs VDS=20V,VGS=10V,ID=20A 4.2 nC
Gate-Drain Charge Qg VDS=20V,VGS=10V,ID=20A 6.0 nC
Switching Characteristics (Note 3)
Turn-on Delay Time td(on) VDD=20V,VGS=10V,RG=3, ID=2ARL=1 6.7 ns
Turn-on Rise Time tr VDD=20V,VGS=10V,RG=3, ID=2ARL=1 17.8 ns
Turn-off Delay Time td(off) VDD=20V,VGS=10V,RG=3, ID=2ARL=1 26.3 ns
Turn-off Fall Time tf VDD=20V,VGS=10V,RG=3, ID=2ARL=1 15.6 ns
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage (Note 2) VSD VGS=0V,IS=20A 1.2 1.3 V
Continuous Drain-Source Diode Forward Current IS 60 A
Pulsed Drain-Source Diode Forward Current ISM 240 A
Dimensions (DPAK)
Dimension INCHES MM MIN MAX MIN MAX
A 0.087 0.094 2.20 2.40
B 0.000 0.005 0.00 0.13
C 0.026 0.034 0.66 0.86
D 0.018 0.023 0.46 0.58
E 0.256 0.264 6.50 6.70
F 0.201 0.215 5.10 5.46
G 0.236 0.244 6.00 6.20
H 0.086 0.094 2.18 2.39
I 0.386 0.409 9.80 10.40
J 0.055 0.067 1.40 1.70
K 0.043 0.051 1.10 1.30
L 0.000 0.012 0.00 0.30
M 0.190 4.83
O 0.114 2.90
Q 0.063 1.60
TYP. 0.211 5.35

Ordering Information

Device Packing Part Number
MCU60N04A Tape&Reel: 2.5Kpcs/Reel Part Number-TP
MCU60N04A-HF Tape&Reel: 2.5Kpcs/Reel Part Number-TP-HF

2008182106_MCC-MCU60N04A-TP_C725300.pdf

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