N Channel MOSFET with Low Gate Charge and RDS on MCC MCU60N04A TP Featuring Split Gate Trench Design
Product Overview
The MCU60N04A is an N-CHANNEL MOSFET designed with Split Gate Trench Power MV MOSFET technology. It features low RDS(on) and low gate charge, making it suitable for various power applications. The device meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available in a Lead Free Finish/RoHS Compliant version. Halogen Free options are available upon request.
Product Attributes
- Brand: MCCSEMI
- Technology: N-CHANNEL MOSFET, Split Gate Trench Power MV MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- RoHS Compliant: Yes (indicated by "P" suffix)
- Halogen Free: Available upon request (by adding "-HF" suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Case | 2.15 | C/W | ||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 60 | A | |||
| Drain Current-Pulsed | ID | 240 | A | |||
| Single Pulsed Avalanche Energy (Note 1) | EAS | 400 | mJ | |||
| Power Dissipation | PD | 70 | W | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 40 | V | ||
| Gate-Threshold Voltage (Note 2) | VGS(th) | VDS=VGS, ID=250A | 0.9 | 2.0 | V | |
| Gate-Body Leakage Current | IGSS | VGS = 20V, VDS =0V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =40V, VGS =0V | 1 | A | ||
| Drain-Source On-Resistance (Note 2) | RDS(on) | VGS=10V, ID=20A | 5.4 | 7.0 | m | |
| Forward Transconductance (Note 2) | gFS | VDS=25V, ID=20A | 24 | S | ||
| Dynamic Characteristics (Note 3) | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V, f=1MHz | 1650 | pF | ||
| Output Capacitance | Coss | VDS=20V,VGS=0V, f=1MHz | 240 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V, f=1MHz | 170 | pF | ||
| Total Gate Charge | Qg | VDS=20V,VGS=10V,ID=20A | 27 | nC | ||
| Gate-Source Charge | Qgs | VDS=20V,VGS=10V,ID=20A | 4.2 | nC | ||
| Gate-Drain Charge | Qg | VDS=20V,VGS=10V,ID=20A | 6.0 | nC | ||
| Switching Characteristics (Note 3) | ||||||
| Turn-on Delay Time | td(on) | VDD=20V,VGS=10V,RG=3, ID=2ARL=1 | 6.7 | ns | ||
| Turn-on Rise Time | tr | VDD=20V,VGS=10V,RG=3, ID=2ARL=1 | 17.8 | ns | ||
| Turn-off Delay Time | td(off) | VDD=20V,VGS=10V,RG=3, ID=2ARL=1 | 26.3 | ns | ||
| Turn-off Fall Time | tf | VDD=20V,VGS=10V,RG=3, ID=2ARL=1 | 15.6 | ns | ||
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage (Note 2) | VSD | VGS=0V,IS=20A | 1.2 | 1.3 | V | |
| Continuous Drain-Source Diode Forward Current | IS | 60 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 240 | A | |||
| Dimensions (DPAK) | ||||||
| Dimension | INCHES | MM | MIN | MAX | MIN | MAX |
| A | 0.087 | 0.094 | 2.20 | 2.40 | ||
| B | 0.000 | 0.005 | 0.00 | 0.13 | ||
| C | 0.026 | 0.034 | 0.66 | 0.86 | ||
| D | 0.018 | 0.023 | 0.46 | 0.58 | ||
| E | 0.256 | 0.264 | 6.50 | 6.70 | ||
| F | 0.201 | 0.215 | 5.10 | 5.46 | ||
| G | 0.236 | 0.244 | 6.00 | 6.20 | ||
| H | 0.086 | 0.094 | 2.18 | 2.39 | ||
| I | 0.386 | 0.409 | 9.80 | 10.40 | ||
| J | 0.055 | 0.067 | 1.40 | 1.70 | ||
| K | 0.043 | 0.051 | 1.10 | 1.30 | ||
| L | 0.000 | 0.012 | 0.00 | 0.30 | ||
| M | 0.190 | 4.83 | ||||
| O | 0.114 | 2.90 | ||||
| Q | 0.063 | 1.60 | ||||
| TYP. | 0.211 | 5.35 | ||||
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCU60N04A | Tape&Reel: 2.5Kpcs/Reel | Part Number-TP |
| MCU60N04A-HF | Tape&Reel: 2.5Kpcs/Reel | Part Number-TP-HF |
2008182106_MCC-MCU60N04A-TP_C725300.pdf
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