High Current 30V MOSFET MDD Microdiode Semiconductor MDDG03R04Q with Low RDS on and RoHS Compliance
Key Attributes
Model Number:
MDDG03R04Q
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V;5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Input Capacitance(Ciss):
770pF
Output Capacitance(Coss):
468pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
MDDG03R04Q
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The MDDG03R04Q is a 30V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. Optimized for minimal on-state resistance and superior switching performance, it features a best-in-class soft body diode. This MOSFET is ideal for synchronous rectification in ATX/Server/Telecom PSUs, motor drives, uninterruptible power supplies, and micro solar inverters. It boasts an extremely low Max RDS(on) of 4.3 m at VGS = 10 V, ID = 20 A and is 100% UIS Tested and RoHS Compliant.
Product Attributes
- Brand: MDD Semiconductor
- Product Line: Power Trench
- Technology: Shielded Gate
- Certifications: RoHS Compliant, 100% UIS Tested
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TA=25C (Note 1) | 160 | A | ||
| Pulsed Drain Current | IDM | (Note 2) | 300 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note 3) | 50 | mJ | ||
| Power Dissipation | PD | TA=25C | 30 | W | ||
| Thermal Resistance, steady-state | RJA | TA=25C unless otherwise specified | 6 | C/W | ||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Source-Drain Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Gate-Source Leakage Current | IGSS | VGS=-20V | -100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | 4.3 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A | 5.5 | 6.9 | m | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VGS=10V, VDD=15V, ID=30A, RG=3 | 9 | ns | ||
| Turn-on Rise Time | tr | 10 | ns | |||
| Turn-off Fall Time | tf | 22 | ns | |||
| Turn-off Delay Time | td(off) | 25 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS=30A, VGS=0V | 1.0 | V | ||
| Body Diode Reverse Recovery Time | trr | IF=20A, di/dt=100A/s | 10 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/s | 20 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 770 | pF | ||
| Output Capacitance | Coss | 160 | pF | |||
| Reverse Transfer Capacitance | Crss | 19 | pF | |||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=15A | 15 | nC | ||
| Gate Source Charge | Qgs | VGS=10V, VDS=30V, ID=15A | 70 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=30V, ID=15A | 20 | nC | ||
2504281715_MDD-Microdiode-Semiconductor-MDDG03R04Q_C48615221.pdf
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