Power control p channel mosfet MCC BSS84A TP with epoxy construction and moisture sensitivity level 1
Key Attributes
Model Number:
BSS84A-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
8Ω@10V,100mA
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 P-Channel
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS84A-TP
Package:
SOT-23
Product Description
MCC BSS84A P-CHANNEL MOSFET
The MCC BSS84A is a P-CHANNEL MOSFET designed for high-density cell applications, offering ultra-low RDS(on). This rugged and reliable component features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available in a Lead Free Finish/RoHS Compliant version, with a Halogen Free option available upon request by adding the "-HF" suffix. The BSS84A is suitable for various industrial applications requiring efficient power switching and control.
Product Attributes
- Brand: MCC
- Model: BSS84A
- Marking: B84
- Package Type: SOT-23
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- RoHS Compliant: Yes (indicated by "P" suffix)
- Halogen Free: Available upon request (add "-HF" suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain-Source Voltage | VDS | -60 | V | |||
| Continuous Drain Current | ID | -0.17 | -0.68 | A | ||
| Pulsed Drain Current | IDM | -225 | A | |||
| Total Power Dissipation | PD | 225 | mW | |||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Junction to Ambient Thermal Resistance | 556 | C/W | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =30V | 500 | nA | ||
| Gate-Source Leakage Current | IGSS | VDS=-60V, VGS=0V | -5 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Gate-Source Leakage Current | IGSS | VDS=-25V, VGS=0V | -0.1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.9 | -2 | V | |
| Diode Forward Voltage | VSD | VGS=0V, IS=-0.17A | -2.2 | V | ||
| Forward Transconductance | gFS | VDS=-25V, ID=-100mA | 50 | mS | ||
| Input Capacitance | Ciss | VDS=-25V,VGS=0V,f=1MHz | 30 | pF | ||
| Output Capacitance | Coss | VDS=-25V,VGS=0V,f=1MHz | 10 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-25V,VGS=0V,f=1MHz | 5 | pF | ||
| Turn-On Delay Time | td(on) | VDS=-15V,RL=50, ID=-2.5A | 2.5 | ns | ||
| Turn-On Rise Time | tr | VDS=-15V,RL=50, ID=-2.5A | 1 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=-15V,RL=50, ID=-2.5A | 16 | ns | ||
| Turn-Off Fall Time | tf | VDS=-15V,RL=50, ID=-2.5A | 8 | ns | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-0.1A | 10 | |||
| Drain-Source On-Resistance | RDS(on) | VGS=-5V, ID=-0.1A | 10 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -5 | A |
Dimensions (SOT-23)
| DIM | INCHES | MM | NOTE |
|---|---|---|---|
| A | 0.110 0.120 | 2.80 3.04 | |
| B | 0.083 0.104 | 2.10 2.64 | |
| C | 0.047 0.055 | 1.20 1.40 | |
| D | 0.034 0.041 | 0.85 1.05 | |
| E | 0.067 0.083 | 1.70 2.10 | |
| F | 0.018 0.024 | 0.45 0.60 | |
| G | 0.0004 0.006 | 0.01 0.15 | |
| H | 0.035 0.043 | 0.90 1.10 | |
| J | 0.003 0.007 | 0.08 0.18 | |
| K | 0.012 0.020 | 0.30 0.51 | |
| L | 0.020 | 0.50 | 0.007 0.20 |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| BSS84A | Tape&Reel: 3Kpcs/Reel | Part Number-TP |
| Part Number-TP-HF (Halogen Free) |
2410010204_MCC-BSS84A-TP_C668883.pdf
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