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quality Switching N Channel MOSFET MCC BSS138 TP with Low RDS ON UL 94 V 0 Flammability and RoHS Compliance factory
quality Switching N Channel MOSFET MCC BSS138 TP with Low RDS ON UL 94 V 0 Flammability and RoHS Compliance factory

Switching N Channel MOSFET MCC BSS138 TP with Low RDS ON UL 94 V 0 Flammability and RoHS Compliance

Key Attributes
Model Number: BSS138-TP
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
800mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF@25V
Pd - Power Dissipation:
350mW
Mfr. Part #:
BSS138-TP
Package:
SOT-23
Product Description

Product Overview

The BSS138 is an N-Channel MOSFET designed for high-density cell applications, offering extremely low RDS(ON) for efficient voltage-controlled small signal switching. This surface mount device features a high flammability rating (UL 94 V-0) and is moisture sensitivity level 1 compliant. It is available in a lead-free finish and is RoHS compliant. The BSS138 is suitable for applications requiring a reliable and efficient MOSFET switch.

Product Attributes

  • Brand: MCCSEMI
  • Type: N-Channel MOSFET
  • Package: SOT-23
  • Certifications: UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1, RoHS Compliant
  • Availability: Halogen Free available upon request (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 50 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=1mA 0.8 1.5 V
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 100 nA
Drain-Source On-Resistance RDS(on) VGS=10V, ID=0.22A 3.5
Diode Forward Voltage VSD VGS=0V, IS=0.44A 1.4 V
Input Capacitance Ciss VDS=25V,VGS=0V, f=1MHz 60 pF
Output Capacitance Coss VDS=25V,VGS=0V, f=1MHz 27 pF
Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1MHz 13 pF
Turn-On Delay Time td(on) VDD=30V,VGS=10V,RG=6, ID=0.29A 5 ns
Turn-On Rise Time tr VDD=30V,VGS=10V,RG=6, ID=0.29A 18 ns
Turn-Off Delay Time td(off) VDD=30V,VGS=10V,RG=6, ID=0.29A 36 ns
Turn-Off Fall Time tf VDD=30V,VGS=10V,RG=6, ID=0.29A 14 ns
Forward Transconductance gFS VDS=10V, ID=0.22A 120 mS
Operating Junction Temperature Range -55 +150 C
Storage Temperature -55 +150 C
Thermal Resistance (Junction to Ambient) RthJA 357 C/W
Power Dissipation PD 0.35 W
Drain Current-Continuous ID 0.22 A
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS 20 V
DIM INCHES MM NOTE
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50
0.007 0.20 Suggested Solder Pad Layout

Ordering Information:

Device Packing Part Number
BSS138 Tape&Reel: 3Kpcs/Reel -TP

Note: Add "-HF" suffix for Halogen Free, e.g., Part Number-TP-HF.


2410121943_MCC-BSS138-TP_C435876.pdf

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