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quality Soft recovery MICROCHIP APT30DQ60BG diode ideal for motor controllers and switch mode power supplies factory
quality Soft recovery MICROCHIP APT30DQ60BG diode ideal for motor controllers and switch mode power supplies factory

Soft recovery MICROCHIP APT30DQ60BG diode ideal for motor controllers and switch mode power supplies

Key Attributes
Model Number: APT30DQ60BG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
320A
Reverse Leakage Current (Ir):
25uA
Reverse Recovery Time (trr):
30ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
2.4V@30A
Current - Rectified:
30A
Mfr. Part #:
APT30DQ60BG
Package:
TO-247-2
Product Description

Product Overview

The APT30DQ60BG is an ultrafast soft recovery rectifier diode designed for high-frequency applications. It offers features such as ultrafast recovery times, soft recovery characteristics, low forward voltage, and low leakage current. This diode is avalanche energy rated, RoHS compliant, and AEC-Q101 qualified, providing benefits like high switching frequency, low switching losses, and reduced EMI noise. It is suitable for use in power factor correction, switch-mode power supplies, inverters/converters, motor controllers, and as a freewheeling or snubber/clamp diode.

Product Attributes

  • Brand: Microsemi
  • Certifications: RoHS compliant, AEC-Q101 qualified

Technical Specifications

SymbolParameterRatingUnitTest ConditionsMINTYPMAX
Absolute Maximum Ratings
VRMaximum DC reverse voltage600V
VRRMMaximum peak repetitive reverse voltage600V
VRWMMaximum working peak reverse voltage600V
IF(AV)Maximum average forward current30ATC = 117 C, duty cycle = 0.5
IF(RMS)RMS forward current51A
IFSMNon-repetitive forward surge current320ATC = 45 C, 8.3 ms
EAVLAvalanche energy20mJ1 A, 40 mH
TJ, TSTGOperating and storage temperature rangeC-55175
TLLead temperature for 10 s300C
Electrical Performance
VFForward voltageVIF = 30 A2.02.4
IF = 60 A2.4
IF = 30 A, TJ = 125 C1.7
IRMMaximum reverse leakage currentAVR = 600 V25
VR = 600 V, TJ = 125 C500
CTJunction capacitancepFVR = 200 V36
Dynamic Characteristics
trrReverse recovery timensIF = 30 A, di/dt = 200 A/s, VR = 400 V, TC = 25 C23
QrrReverse recovery chargenCIF = 30 A, di/dt = 200 A/s, VR = 400 V, TC = 25 C55
IRRMMaximum reverse recovery currentAIF = 30 A, di/dt = 200 A/s, VR = 400 V, TC = 25 C3
trrReverse recovery timensIF = 30 A, di/dt = 200 A/s, VR = 400 V, TC = 125 C175
QrrReverse recovery chargenCIF = 30 A, di/dt = 200 A/s, VR = 400 V, TC = 125 C485
IRRMMaximum reverse recovery currentAIF = 30 A, di/dt = 200 A/s, VR = 400 V, TC = 125 C6
trrReverse recovery timensIF = 30 A, di/dt = 1000 A/s, VR = 400 V, TC = 125 C75
QrrReverse recovery chargenCIF = 30 A, di/dt = 1000 A/s, VR = 400 V, TC = 125 C855
IRRMMaximum reverse recovery currentAIF = 30 A, di/dt = 1000 A/s, VR = 400 V, TC = 125 C22
Thermal and Mechanical Characteristics
RJCJunction-to-case thermal resistanceC/W0.80
WTPackage weightoz0.22
g5.9
TorqueMaximum mounting torquelbm1.1
Nm

2410010201_MICROCHIP-APT30DQ60BG_C5444767.pdf

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