MCC MCQ15N10B TP N Channel Enhancement Mode Transistor Offering Low Switching Loss and Fast Recovery
Key Attributes
Model Number:
MCQ15N10B-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
7.7mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
9pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
3.53nF@50V
Pd - Power Dissipation:
4W
Gate Charge(Qg):
60.7nC@10V
Mfr. Part #:
MCQ15N10B-TP
Package:
SOP-8
Product Description
Product Overview
The MCQ15N10B is an N-Channel Enhancement Mode Field Effect Transistor designed for applications requiring low RDS(on) and excellent switching performance. It features extremely low switching loss, fast switching speeds with soft recovery, and offers exceptional stability and uniformity. This transistor is built with an epoxy that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. It is available as Halogen Free upon request by adding the "-HF" suffix and is Lead Free/RoHS Compliant. The device operates within a junction temperature range of -55C to +150C.
Product Attributes
- Brand: MCC (Micro Commercial Components Corp.)
- Product Type: N-Channel Enhancement Mode Field Effect Transistor
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- RoHS Compliance: Yes (indicated by "P" suffix, or "-HF" for Halogen Free)
Technical Specifications
Internal Structure:
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Gate-Source Voltage | VGS | 20 | V | |
| Drain-Source Voltage | VDS | 100 | V | |
| Continuous Drain Current | ID | 15 (TC=25C), 4 (TC=100C) | A | Note 2 |
| Pulsed Drain Current | IDM | 64 | A | Note 3 |
| Total Power Dissipation | PD | 1.6 | W | Note 4 |
| Single Pulsed Avalanche Energy | EAS | 130 | mJ | Note 5 |
| Operating Junction Temperature Range | Tj | -55 to +150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Thermal Resistance (Junction to Ambient) | RJA | 31 | C/W | Note 1 |
Electrical Characteristics @ 25C (Unless Otherwise Specified):
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =100V, VGS =0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=12A | 7.7 | 9.5 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=9A | 9.2 | 12.5 | m | |
| Diode Forward Voltage | VSD | VGS=0V, IS=15A | 1.3 | V | ||
| Maximum Body-Diode Continuous Current | IS | 15 | A |
Dynamic Characteristics:
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f =1MHz | 3530 | pF | ||
| Output Capacitance | Coss | VDS=50V,VGS=0V,f =1MHz | 560 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f =1MHz | 9 | pF | ||
| Total Gate Charge | Qg | VDS=50V,VGS=10V,ID=10A | 60.7 | nC | ||
| Gate-Source Charge | Qgs | VDS=50V,VGS=10V,ID=10A | 7.2 | nC | ||
| Gate-Drain Charge | Qg d | VDS=50V,VGS=10V,ID=10A | 14.6 | nC | ||
| Reverse Recovery Chrage | Qrr | IF=10A, di/dt=100A/s | 160 | nC | ||
| Reverse Recovery Time | trr | IF=10A, di/dt=100A/s | 67 | ns | ||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V,ID=10A | 22.5 | ns | ||
| Turn-On Rise Time | tr | VGS=10V,VDD=50V,ID=10A | 8.6 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=50V,VGS=10V,ID=10A | 66.6 | ns | ||
| Turn-Off Fall Time | tf | VDS=50V,VGS=10V,ID=10A | 42.1 | ns |
Dimensions (SOP-8 Package):
| DIM | INCHES | MM |
|---|---|---|
| A | 0.053 - 0.069 | 1.35 - 1.75 |
| B | 0.004 - 0.010 | 0.10 - 0.25 |
| C | 0.053 - 0.061 | 1.35 - 1.55 |
| D | 0.013 - 0.020 | 0.33 - 0.51 |
| E | 0.007 - 0.010 | 0.17 - 0.25 |
| F | 0.185 - 0.200 | 4.70 - 5.10 |
| G | 0.228 - 0.244 | 5.80 - 6.20 |
| H | 0.150 - 0.157 | 3.80 - 4.00 |
| J | 0.016 - 0.050 | 0.40 - 1.27 |
| K | 0 - 8 | 0 - 8 |
Suggested Solder Pad Layout:
| Dimension | Value (mm) |
|---|---|
| Pad Width (G) | 1.27mm BSC |
| Pad Spacing (H) | 3.80 - 4.00mm |
| Pad Length (F) | 4.70 - 5.10mm |
| Overall Width (G) | 5.80 - 6.20mm |
| Overall Length (F) | 4.70 - 5.10mm |
| Pad to Pad Center (J) | 3.80 - 4.00mm |
Ordering Information:
| Device | Packing | Part Number |
|---|---|---|
| MCQ15N10B | Tape&Reel: 4Kpcs/Reel | -TP |
Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF
2410121951_MCC-MCQ15N10B-TP_C779187.pdf
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