MOSFET switch MDD Microdiode Semiconductor 2N7002KDW with epoxy UL 94V 0 and compact SOT 363 package
Key Attributes
Model Number:
2N7002KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
900mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Input Capacitance(Ciss):
40pF
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002KDW
Package:
SOT-363
Product Description
Product Overview
The 2N7002KDW is an N-Channel Enhancement Mode MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(ON), making it a voltage-controlled small signal switch. This rugged and reliable MOSFET offers high saturation current capability and ESD protection, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: microdiode.com
- Package: SOT-363 Plastic Outline
- Material: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 0.34 | A | |||
| Power Dissipation | PD | (Ta=25) | 150 | mW | ||
| Thermal Resistance (Junction to Ambient) | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -50 | ~ | +150 | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V (TA=25) | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=1mA | 1.0 | 1.3 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=0.5A | 0.9 | 2.7 | ||
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=0.2A | 1.1 | 3 | ||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | 40 | pF | ||
| Output Capacitance | Coss | 30 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Recovered Charge | Qr | VDS=0V,ID=0.2A, VR=25V,dIs/dt=-100A/us | 30 | nC | ||
| Turn on Delay Time | td(on) | VDD=50V, RL=250, VGS=10V, RG=50 | 10 | ns | ||
| Turn Off Delay Time | td(off) | 15 | ns | |||
| Reverse Recovery Time | trr | VGS=0V, IS=300mA, VR=25V, dIs/dt=-100A/us | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVDSS | Igs=1mA(Open Drain) | 21.5 | 32 | V |
2507221720_MDD-Microdiode-Semiconductor-2N7002KDW_C49383131.pdf
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