High Current Ultrafast Soft Recovery Rectifier MICROCHIP APT40DQ120BG for Switch Mode Power Supplies
Key Attributes
Model Number:
APT40DQ120BG
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA
Non-Repetitive Peak Forward Surge Current:
210A
Reverse Recovery Time (trr):
430ns
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
3.3V@30A
Current - Rectified:
40A
Mfr. Part #:
APT40DQ120BG
Package:
TO-247
Product Description
Product Overview
The APT40DQ120BG is an Ultrafast Soft Recovery Rectifier Diode designed for high-frequency applications. It offers ultrafast recovery times, soft recovery characteristics, low forward voltage, and low leakage current. This AEC-Q101 qualified and RoHS compliant device enhances system reliability and power density, making it suitable for power factor correction, switch-mode power supplies, inverters/converters, motor controllers, and as anti-parallel, freewheeling, or snubber/clamp diodes.
Product Attributes
- Brand: Microsemi
- Certifications: AEC-Q101 qualified, RoHS compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VR | Maximum DC reverse voltage | 1200 | V | |||
| VRRM | Maximum peak repetitive reverse voltage | 1200 | V | |||
| VRWM | Maximum working peak reverse voltage | 1200 | V | |||
| IF(AV) | Maximum average forward current (TC = 112 C, duty cycle = 0.5) | 40 | A | |||
| IF(RMS) | RMS forward current | 63 | A | |||
| IFSM | Non-repetitive forward surge current (TJ = 45 C, 8.3 ms) | 210 | A | |||
| EAVL | Avalanche energy (1 A, 40 mH) | 20 | mJ | |||
| TJ, TSTG | Operating and storage temperature range | 55 | 175 | C | ||
| TL | Lead temperature for 10 seconds | 300 | C | |||
| Thermal and Mechanical Characteristics | ||||||
| RJC | Junction-to-case thermal resistance | 0.61 | C/W | |||
| WT | Package weight | 0.22 | oz / 5.9 | g | ||
| Torque | Maximum mounting torque | 10 | lb-in / 1.1 N-m | |||
| Static Characteristics | ||||||
| VF | Forward voltage | IF = 30 A | 2.8 | 3.3 | V | |
| VF | Forward voltage | IF = 60 A | 3.4 | V | ||
| VF | Forward voltage | IF = 30 A, TJ = 125 C | 2.1 | V | ||
| IRM | Maximum reverse leakage current | VR = 1200 V | 100 | A | ||
| IRM | Maximum reverse leakage current | VR = 1200 V, TJ = 125 C | 500 | A | ||
| CJ | Junction capacitance | VR = 200 V | 36 | pF | ||
| Dynamic Characteristics | ||||||
| trr | Reverse recovery time | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C | 26 | ns | ||
| trr | Reverse recovery time | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C | 350 | ns | ||
| Qrr | Reverse recovery charge | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C | 570 | nC | ||
| IRRM | Maximum reverse recovery current | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C | 4 | A | ||
| trr | Reverse recovery time | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C | 430 | ns | ||
| Qrr | Reverse recovery charge | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C | 2200 | nC | ||
| IRRM | Maximum reverse recovery current | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C | 9 | A | ||
| trr | Reverse recovery time | IF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C | 210 | ns | ||
| Qrr | Reverse recovery charge | IF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C | 3400 | nC | ||
| IRRM | Maximum reverse recovery current | IF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C | 29 | A | ||
2410122030_MICROCHIP-APT40DQ120BG_C17315482.pdf
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