P Channel Enhancement Mode MOSFET MIRACLE POWER MU3401V Suitable for General Electronic Applications
Key Attributes
Model Number:
MU3401V
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
39mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 P-Channel
Output Capacitance(Coss):
69pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
753pF
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
MU3401V
Package:
SOT-23-3L
Product Description
Product Overview
The MU3401V is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for load switching and general applications, this MOSFET offers a drain-source voltage of -30V and a continuous drain current of -4A. It features a typical on-resistance (RDS(ON)) of 39m at VGS = -10V. The device is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: P-Channel Enhancement Mode MOSFET
- Compliance: RoHS and Halogen-Free Compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID | Drain Current-Continuous, TA =25C | -4 | A | |||
| IDM | Drain Current-Pulsedb | -27 | A | |||
| PD | Maximum Power Dissipation @ TA =25C | 1.4 | W | |||
| TSTG | Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction-Ambienta | Max | 125 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =-30V, VGS = 0V | - | - | -1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 12V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =-250A | -0.5 | -0.9 | -1.3 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS =-2.5V, ID =-2.5A | - | 50 | 85 | m |
| VGS =-4.5V, ID =-3.5A | - | 43 | 60 | m | ||
| VGS =-10V, ID =-4A | - | 39 | 48 | m | ||
| gfs | Forward Transconductance | VDS=-5V, ID=-4A | - | 19 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = -15V, VGS = 0V, f = 1.0MHz | - | 753 | - | pF |
| Coss | Output Capacitance | - | 69 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 59 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS=-15V, RL=15, RG=2.5, VGS =-10V | - | 4.5 | - | ns |
| td(off) | Turn-Off Delay Time | - | 79.5 | - | ns | |
| Qg | Total Gate Charge | VDS =-24V, ID=-4A, VGS = -10V | - | 21 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0V, ISD = -4.1A | - | -0.7 | -1.2 | V |
| Is | Continuous Source Current | - | - | -1.6 | A | |
Notes:
a: The value of RJA is measured with the device mounted on 1in FR-4 board with 1oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design.
b: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ=25C.
2411220026_MIRACLE-POWER-MU3401V_C34373740.pdf
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