Dual N and P Channel MOSFET in SOP8 Package MCC MCQ4503A TP Suitable for Electronic Applications
Key Attributes
Model Number:
MCQ4503A-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
30mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
255pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
MCQ4503A-TP
Package:
SOP-8
Product Description
Product Overview
The MCQ4503A is a Dual N&P-Channel MOSFET in a SOP-8 package, designed for various electronic applications. It features a lead-free finish and is RoHS compliant, with an option for halogen-free availability. The epoxy material meets UL 94 V-0 flammability rating, and it has a Moisture Sensitivity Level 1. This MOSFET is suitable for applications requiring reliable performance with operating and storage temperature ranges of -55C to +150C.
Product Attributes
- Brand: MCCSEMI.COM
- Compliance: Lead Free Finish/RoHS Compliant (P Suffix), Halogen Free Available (Add -HF Suffix)
- Flammability Rating: Epoxy Meets UL 94 V-0
- Moisture Sensitivity Level: 1
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance (Junction to Ambient) | 62.5 | C/W | ||||
| Maximum Ratings | ||||||
| Total Power Dissipation (TA=25C) | PD | 2.0 | W | |||
| Total Power Dissipation (TA=70C) | PD | A | ||||
| Pulsed Drain Current (Note 2) | IDM | 26 | A | |||
| N-Channel MOSFET Electrical Characteristics @ 25C | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.6 | 2.4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=5A | 30 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=5A | 40 | m | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=5A | 1.2 | V | ||
| Forward Tranconductance | gFS | VDS=5V, ID=5A | 4 | S | ||
| Input Capacitance | Ciss | VDD=15V,VGS=0V,f=1MHz | 255 | pF | ||
| Output Capacitance | Coss | VDD=15V,VGS=0V,f=1MHz | 45 | pF | ||
| Reverse Transfer Capacitance | Crss | VDD=15V,VGS=0V,f=1MHz | 35 | pF | ||
| Total Gate Charge | Qg | VDD =15V, VGS=10V,ID=5A | 5.2 | nC | ||
| Gate-Source Charge | Qgs | VDD =15V, VGS=10V,ID=5A | 0.85 | nC | ||
| Gate-Drain Charge | Qg | VDD =15V, VGS=10V,ID=5A | 1.3 | nC | ||
| Turn-On Delay Time | td(on) | VDD=15V,VGS=10V,ID=5A | 4.5 | ns | ||
| Turn-On Rise Time | tr | VDD=15V,VGS=10V,ID=5A | 2.5 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=15V,VGS=10V,ID=5A | 14.5 | ns | ||
| Turn-Off Fall Time | tf | VDD=15V,VGS=10V,ID=5A | 3.5 | ns | ||
| P-Channel MOSFET Electrical Characteristics @ 25C | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.6 | -2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-4A | 60 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-4A | 90 | m | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-5A | -1.2 | V | ||
| Forward Tranconductance | gFS | VDS=-5V, ID=-5A | 4 | S | ||
| Input Capacitance | Ciss | VDD=-15V,VGS=0V,f=1MHz | 520 | pF | ||
| Output Capacitance | Coss | VDD=-15V,VGS=0V,f=1MHz | 100 | pF | ||
| Reverse Transfer Capacitance | Crss | VDD=-15V,VGS=0V,f=1MHz | 65 | pF | ||
| Total Gate Charge | Qg | VDD=-15V,VGS=-10V,ID=-5A | 9.2 | nC | ||
| Gate-Source Charge | Qgs | VDD=-15V,VGS=-10V,ID=-5A | 1.6 | nC | ||
| Gate-Drain Charge | Qg | VDD=-15V,VGS=-10V,ID=-5A | 2.2 | nC | ||
| Turn-On Delay Time | td(on) | VDD=-15V,VGS=-10V,ID=-5A | 7.5 | ns | ||
| Turn-On Rise Time | tr | VDD=-15V,VGS=-10V,ID=-5A | 5.5 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=-15V,VGS=-10V,ID=-5A | 19 | ns | ||
| Turn-Off Fall Time | tf | VDD=-15V,VGS=-10V,ID=-5A | 7 | ns | ||
| Dimensions (SOP-8) | ||||||
| Dimension | Inches | MM | Min | Max | Min | Max |
| A | 0.053 - 0.069 | 1.35 - 1.75 | ||||
| B | 0.004 - 0.010 | 0.10 - 0.25 | ||||
| C | 0.053 - 0.061 | 1.35 - 1.55 | ||||
| D | 0.013 - 0.020 | 0.33 - 0.51 | ||||
| E | 0.007 - 0.010 | 0.17 - 0.25 | ||||
| F | 0.185 - 0.200 | 4.70 - 5.10 | ||||
| G | 0.228 - 0.244 | 5.80 - 6.20 | ||||
| H | 0.150 - 0.157 | 3.80 - 4.00 | ||||
| J | 0.016 - 0.050 | 0.40 - 1.27 | ||||
| K | 0 - 8 | 0 - 8 | ||||
| Suggested Solder Pad Layout | ||||||
| Pad Size (TYP) | 1.27mm | 0.80mm | 1.50mm | 6.50mm | 4.61mm | |
| Ordering Information | ||||||
| Device | Packing | Part Number | Note | |||
| MCQ4503A | Tape&Reel: 4Kpcs/Reel | -TP | Add "-HF" Suffix for Halogen Free, e.g., Part Number-TP-HF | |||
2410121951_MCC-MCQ4503A-TP_C712367.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
