Power MDD Microdiode Semiconductor MDDG10R08P 100V N Channel MOSFET with advanced trench gate design
Key Attributes
Model Number:
MDDG10R08P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
75A
RDS(on):
6.5mΩ@10V;8.3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Output Capacitance(Coss):
410pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
MDDG10R08P
Package:
TO-220C-3L
Product Description
Product Overview
The MDDG10R08P is a 100V N-Channel Enhancement Mode MOSFET from MDD Semiconductor, utilizing an advanced Power Trench process with Shielded Gate technology. This design optimizes for minimal on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is 100% UIS Tested and RoHS Compliant.
Product Attributes
- Brand: MDD Semiconductor
- Origin: Craftsman-Made Consciention Chip
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Unit | Min | Typ | Max |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | V | 100 | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | nA | 100 | ||
| Gate-Source Leakage Current | IGSS | VGS=-20V | nA | -100 | ||
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | A | 1 | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | V | 1.5 | 2.0 | 2.5 |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=35A | m | 8 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=30A | m | 8.3 | 11 | |
| Continuous Drain Current | ID | Calculated continuous current based on maximum allowable junction temperature. | A | 75 | ||
| Pulsed Drain Current | IDM | Note 2 | A | 240 | ||
| Power Dissipation | PD | TA=25C | W | 100 | ||
| Single Pulsed Avalanche Energy | EAS | Note 3 | mJ | 130 | ||
| Thermal Resistance, steady-state | RJA | C/W | 50 | |||
| Junction Temperature | TJ | C | 150 | |||
| Storage Temperature | Tstg | C | -55 | 150 | ||
| Gate-Source Voltage | VGS | V | 20 | |||
| Source-Drain Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | V | 100 | ||
| Turn on Delay Time | td(on) | VDD=50V, VGS=10V, ID=30A, RG=2.7 | ns | 9 | 11 | |
| Turn on Rise Time | tr | VDD=50V, VGS=10V, ID=30A, RG=2.7 | ns | 36 | ||
| Turn Off Fall Time | tf | VDD=50V, VGS=10V, ID=30A, RG=2.7 | ns | 33 | ||
| Turn Off Delay Time | td(off) | VDD=50V, VGS=10V, ID=30A, RG=2.7 | ns | 10 | ||
| Source Drain Diode Forward Voltage | VSD | IS=30A, VGS=0V | V | 0.85 | ||
| Body Diode Reverse Recovery Time | trr | IF=30A, di/dt=100A/s | ns | 50 | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=30A, di/dt=100A/s | nC | 71 | ||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | pF | 2000 | ||
| Output Capacitance | Coss | VDS=50V, VGS=0V, f=1MHz | pF | 410 | ||
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, f=1MHz | pF | 90 | ||
| Total Gate Charge | Qg | VDS=50V, ID=30A, VGS=10V | nC | 10.3 | ||
| Gate Source Charge | Qgs | VDS=50V, ID=30A, VGS=10V | nC | 7.5 | ||
| Gate Drain Charge | Qgd | VDS=50V, ID=30A, VGS=10V | nC | 6.5 |
2507221720_MDD-Microdiode-Semiconductor-MDDG10R08P_C49382861.pdf
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