Ultrafast Soft Recovery Rectifier Si Diode MICROCHIP APT15DQ120KG 1200 Volt 15 Amp TO220 Package
Key Attributes
Model Number:
APT15DQ120KG
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@1.2kV
Reverse Recovery Time (trr):
240ns
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
1.2kV
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
3.3V@15A
Current - Rectified:
15A
Mfr. Part #:
APT15DQ120KG
Package:
TO-220
Product Description
Product Overview
The APT15DQ120KG is a 1200 V, 15 A Ultrafast Soft Recovery Rectifier Si Diode in a TO-220 package. It offers ultrafast recovery times, soft recovery characteristics, low forward voltage, low leakage current, and is avalanche-energy rated, RoHS compliant, and AEC-Q101 qualified. These features lead to high switching frequency, low switching losses, reduced EMI, higher reliability systems, and increased system power density.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant, AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | V | ||
| Maximum working peak reverse voltage | VRWM | V | ||
| Maximum average forward current | IF(AV) | 15 | A | TC = 127 C, duty cycle = 0.5 |
| Non-repetitive forward surge current | IFSM | 110 | A | TJ = 45 C, 8.3 ms |
| Avalanche-energy | EAVL | 20 | mJ | 1 A, 40 mH |
| Junction-to-case thermal resistance | RJC | 1.18 | C/W | |
| Operating and storage temperature range | TJ, TSTG | 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Package weight | Wt | 1.9 | g | |
| Mounting torque, 6-32 or M3 screw | 1.1 | Nm | ||
| Forward voltage | VF | 3.3 | V | IF = 15 A |
| Forward voltage | VF | 3.4 | V | IF = 30 A |
| Forward voltage | VF | 2.5 | V | IF = 15 A, TJ = 125 C |
| Maximum reverse leakage current | IRM | 100 | A | VR = 1200 V |
| Maximum reverse leakage current | IRM | 500 | A | VR = 1200 V, TJ = 125 C |
| Junction capacitance | CJ | 17 | pF | VR = 200 V |
| Reverse recovery time | trr | 21 | ns | IF = 1 A; diF/dt = 100 A/s; VR = 30 V |
| Reverse recovery time | trr | 240 | ns | IF = 15 A; diF/dt = 200 A/s; VR = 800 V |
| Reverse recovery charge | Qrr | 260 | nC | IF = 15 A; diF/dt = 200 A/s; VR = 800 V |
| Maximum reverse recovery current | IRRM | 3 | A | IF = 15 A; diF/dt = 200 A/s; VR = 800 V |
| Reverse recovery time | trr | 290 | ns | IF = 15 A; diF/dt = 200 A/s; VR = 800 V; TJ = 125 C |
| Reverse recovery charge | Qrr | 960 | nC | IF = 15 A; diF/dt = 200 A/s; VR = 800 V; TJ = 125 C |
| Maximum reverse recovery current | IRRM | 6 | A | IF = 15 A; diF/dt = 200 A/s; VR = 800 V; TJ = 125 C |
| Reverse recovery time | trr | 130 | ns | IF = 15 A; diF/dt = 1000 A/s; VR = 800 V; TJ = 125 C |
| Reverse recovery charge | Qrr | 1340 | nC | IF = 15 A; diF/dt = 1000 A/s; VR = 800 V; TJ = 125 C |
| Maximum reverse recovery current | IRRM | 19 | A | IF = 15 A; diF/dt = 1000 A/s; VR = 800 V; TJ = 125 C |
2410122011_MICROCHIP-APT15DQ120KG_C7527970.pdf
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