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quality Switching N Channel MOSFET MIRACLE POWER MSA004B with TO 263 Package and 100 Percent EAS Guarantee factory
quality Switching N Channel MOSFET MIRACLE POWER MSA004B with TO 263 Package and 100 Percent EAS Guarantee factory

Switching N Channel MOSFET MIRACLE POWER MSA004B with TO 263 Package and 100 Percent EAS Guarantee

Key Attributes
Model Number: MSA004B
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
173A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Output Capacitance(Coss):
815pF
Pd - Power Dissipation:
312W
Input Capacitance(Ciss):
5.718nF
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
MSA004B
Package:
TO-263
Product Description

Product Overview

The MSA004B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with advanced trench technology, this MOSFET offers excellent RDS(on) and low gate charge, making it ideal for load switch, PWM applications, and power management. It is 100% EAS guaranteed and designed for high-performance switching applications.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology
  • Guarantees: 100% EAS Guaranteed

Technical Specifications

Model Voltage (VDS) Current (ID) RDS(on) (Typ.) Gate Charge (Qg) Package
MSA004B 110V 173A 3.5m @ VGS = 10V 86nC TO-263
Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 110 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 173 A
ID Drain Current-Continuous TC = 100C 109 A
IDM Drain Current-Pulsed 519 A
PD Maximum Power Dissipation TC = 25C 312 W
EAS Single Pulsed Avalanche Energy 870 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.4 C/W
RJA Thermal Resistance, Junction to Ambient 70 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 110 - - V
IDSS Zero Gate Voltage Drain Current VDS = 110V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 20A - 3.5 4.5 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.2 -
Ciss Input Capacitance VDS = 55V, VGS = 0V, f = 1.0MHz - 5718 - pF
Coss Output Capacitance - 815 - pF
Crss Reverse Transfer Capacitance - 27 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2 - 25 - ns
tr Turn-On Rise Time - 41 - ns
td(off) Turn-Off Delay Time - 67 - ns
tf Turn-Off Fall Time - 42 - ns
Qg Total Gate Charge VDS = 55V, VGS = 0 to 10V, ID = 20A - 86 - nC
Qgs Gate-Source Charge - 30 - nC
Qgd Gate-Drain Charge - 19 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 173 A
ISM Maximum Pulsed Current - - 519 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 82 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 223 - nC

Applications: Load Switch, PWM Application, Power Management


2504151445_MIRACLE-POWER-MSA004B_C47361211.pdf

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